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1
Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing
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Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing

Feng, Junhao ; Choi, Ji-Hoon ; Zhang, Xue ; Park, Jaehoon ; Bae, Jin-Hyuk

Journal of the Korean Physical Society, 2024, 85(1), , pp.66-75 [Revista revisada por pares]

Seoul: The Korean Physical Society

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2
Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect
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Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect

Wang, Guang-Xin ; Duan, Xiu-Zhi

Journal of the Korean Physical Society, 2024, 85(1), , pp.56-65 [Revista revisada por pares]

Seoul: The Korean Physical Society

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3
Analytical modeling of organic permeable-base transistors based on geometrical parametrization
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Analytical modeling of organic permeable-base transistors based on geometrical parametrization

Joshi, Saurabh Sureda ; Lim, Kyung-Geun ; Kim, Chang-Hyun

Journal of the Korean Physical Society, 2023, 83(9), , pp.681-684 [Revista revisada por pares]

Seoul: The Korean Physical Society

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4
Nonreciprocal spin-wave propagation in YIG/GGG: a limit on the DMI parameter
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Nonreciprocal spin-wave propagation in YIG/GGG: a limit on the DMI parameter

Trossman, J. ; Lim, Jinho ; Ketterson, J. B. ; Bang, Wonbae

Journal of the Korean Physical Society, 2023-08, Vol.83 (4), p.310-314 [Revista revisada por pares]

Seoul: The Korean Physical Society

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5
TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications
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TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Chen, Simin ; Ahn, Dae-Hwan ; An, Seong Ui ; Noh, Tae Hyeon ; Kim, Younghyun

Journal of the Korean Physical Society, 2024, 85(1), , pp.47-55 [Revista revisada por pares]

Seoul: The Korean Physical Society

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6
Characterizing the dielectric function of SnS on the ab-plane through parameterization
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Characterizing the dielectric function of SnS on the ab-plane through parameterization

Nguyen, Xuan Au ; Kim, Young Dong ; Le, Long Van ; Nguyen, Hoang Tung ; Kim, Tae Jung

Journal of the Korean Physical Society, 2024-05, Vol.84 (10), p.793-798 [Revista revisada por pares]

Seoul: The Korean Physical Society

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7
High sensitivity of isopropyl alcohol gas sensor based on memristor device operated at room temperature
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High sensitivity of isopropyl alcohol gas sensor based on memristor device operated at room temperature

Lee, Doowon ; Bae, Dongjoo ; Chae, Myoungsu ; Kim, Hee-Dong

Journal of the Korean Physical Society, 2022, 80(11), , pp.1065-1070 [Revista revisada por pares]

Seoul: The Korean Physical Society

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8
Bifacial module characterization analysis with current mismatched PERC cells
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Bifacial module characterization analysis with current mismatched PERC cells

Hwang, Sungho ; Lee, Hae‐seok ; Kang, Yoonmook

Journal of the Korean Physical Society, 2024, Vol.84 (2), p.145-150 [Revista revisada por pares]

Seoul: The Korean Physical Society

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9
Electrochemical aptasensor utilizing pulsed-electrodeposition of MXene film for estradiol detection
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Electrochemical aptasensor utilizing pulsed-electrodeposition of MXene film for estradiol detection

Min, Seonki ; Noh, Daegwon ; Oh, Eunsoon

Journal of the Korean Physical Society, 2024-03, Vol.84 (6), p.454-461 [Revista revisada por pares]

Seoul: The Korean Physical Society

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10
Tunable emission properties of Eu ions in KBPO4 (B = Ca, Sr, and Ba) via variation in their valence states
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Tunable emission properties of Eu ions in KBPO4 (B = Ca, Sr, and Ba) via variation in their valence states

Lee, D. J. ; Kwark, M. C. ; Kim, D. Y. ; Wi, S. W. ; Chung, J.-S. ; Kim, Il Won ; Kwark, Young-Je ; Lee, Y. S.

Journal of the Korean Physical Society, 2022-10, Vol.81 (7), p.646-652 [Revista revisada por pares]

Seoul: The Korean Physical Society

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