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Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance
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Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

Wang, Z. Q. ; Xu, H. Y. ; Li, X. H. ; Zhang, X. T. ; Liu, Y. X. ; Liu, Y. C.

IEEE electron device letters, 2011-10, Vol.32 (10), p.1442-1444 [Periódico revisado por pares]

New York, NY: IEEE

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2
A co-designed neuromorphic chip with compact (17.9K F2) and weak neuron number-dependent neuron/synapse modules
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A co-designed neuromorphic chip with compact (17.9K F2) and weak neuron number-dependent neuron/synapse modules

Hu, S. G. ; Qiao, G. C. ; Liu, X. K. ; Liu, Y. H. ; Zhang, C. M. ; Zuo, Y. ; Zhou, P. J. ; Liu, Y. A. ; Ning, N. ; Yu, Q. ; Liu, Y.

IEEE transactions on biomedical circuits and systems, 2022-12, Vol.16 (6), p.1-11 [Periódico revisado por pares]

United States: IEEE

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3
Robust Load Frequency Control of Power Systems Against Random Time-Delay Attacks
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Robust Load Frequency Control of Power Systems Against Random Time-Delay Attacks

Xiahou, K. S. ; Liu, Y. ; Wu, Q. H.

IEEE transactions on smart grid, 2021-01, Vol.12 (1), p.909-911 [Periódico revisado por pares]

Piscataway: IEEE

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4
Effect of Hydrogen on Defects of AlGaN/GaN HEMTs Characterized by Low-Frequency Noise
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Effect of Hydrogen on Defects of AlGaN/GaN HEMTs Characterized by Low-Frequency Noise

Chen, Y. Q. ; Zhang, Y. C. ; Liu, Y. ; Liao, X. Y. ; En, Y. F. ; Fang, W. X. ; Huang, Y.

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1321-1326 [Periódico revisado por pares]

New York: IEEE

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5
Spike-driven gated recurrent neural network processor for electrocardiogram arrhythmias detection realised in 55-nm CMOS technology
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Spike-driven gated recurrent neural network processor for electrocardiogram arrhythmias detection realised in 55-nm CMOS technology

Wu, Yuancong ; Liu, Y.H ; Liu, Shuang ; Yu, Q ; Chen, T.P ; Liu, Y

Electronics letters, 2020-11, Vol.56 (23), p.1230-1232 [Periódico revisado por pares]

The Institution of Engineering and Technology

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6
Reply to comments on: ‘general SVPWM strategy for three different four-switch three-phase inverters’
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Reply to comments on: ‘general SVPWM strategy for three different four-switch three-phase inverters’

Liu, Y.-C

Electronics letters, 2018-04, Vol.54 (7), p.439-439 [Periódico revisado por pares]

The Institution of Engineering and Technology

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7
Breakdown effect of periodic perturbations to the robustness of topological phase in a gyromagnetic photonic crystal
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Breakdown effect of periodic perturbations to the robustness of topological phase in a gyromagnetic photonic crystal

Tian, Y. ; Zhou, Rui ; Liu, Zheng‐Rong ; Liu, Y. ; Lin, Hai ; Zhou, Bin

IET optoelectronics, 2023-12, Vol.17 (6), p.249-256 [Periódico revisado por pares]

Wiley

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8
The structural and optical properties of Cu2O films electrodeposited on different substrates
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The structural and optical properties of Cu2O films electrodeposited on different substrates

Liu, Y L ; Liu, Y C ; Mu, R ; Yang, H ; Shao, C L ; Zhang, J Y ; Lu, Y M ; Shen, D Z ; Fan, X W

Semiconductor science and technology, 2005-01, Vol.20 (1), p.44-49 [Periódico revisado por pares]

Bristol: IOP Publishing

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9
Comparative Study of Air-Gap Field Modulation in Flux Reversal and Vernier Permanent Magnet Machines
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Comparative Study of Air-Gap Field Modulation in Flux Reversal and Vernier Permanent Magnet Machines

Li, Hua-Yang ; Liu, Y. ; Zhu, Z. Q.

IEEE transactions on magnetics, 2018-11, Vol.54 (11), p.1-6

New York: IEEE

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10
Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
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Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer

Yung Hsun Lin ; Liu, Y S ; Liu, C Y

IEEE photonics technology letters, 2010-10, Vol.22 (19), p.1443-1445

New York: IEEE

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