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Activation energy of surface diffusion and terrace width dynamics during the growth of In ( 4 × 3 ) on Si ( 100 ) - ( 2 × 1 ) by femtosecond pulsed laser deposition
Activation energy of surface diffusion and terrace width dynamics during the growth of In ( 4 × 3 ) on Si ( 100 ) - ( 2 × 1 ) by femtosecond pulsed laser deposition
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Activation energy of surface diffusion and terrace width dynamics during the growth of In ( 4 × 3 ) on Si ( 100 ) - ( 2 × 1 ) by femtosecond pulsed laser deposition

Hafez, M. A. ; Elsayed-Ali, H. E.

Journal of applied physics, 2008-05, Vol.103 (9), p.093510-093510-10 [Periódico revisado por pares]

American Institute of Physics

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2
Coercivity of magnetic domain wall motion near the edge of a terrace
Coercivity of magnetic domain wall motion near the edge of a terrace
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Coercivity of magnetic domain wall motion near the edge of a terrace

Hsieh, Yung-Chieh ; Mansuripur, M.

Journal of applied physics, 1995-07, Vol.78 (1), p.380-386 [Periódico revisado por pares]

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3
Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
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Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

Chen, Xiren ; Song, Yuxin ; Zhu, Liang ; Wang, S. M. ; Lu, Wei ; Guo, Shaoling ; Shao, Jun

Journal of applied physics, 2013-04, Vol.113 (15), p.153505 [Periódico revisado por pares]

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4
Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystals
Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystals
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Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystals

Yokomoto, Kaito ; Yabu, Masahiro ; Hashiguchi, Takato ; Ohtani, Noboru

Journal of applied physics, 2020-10, Vol.128 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology
Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology
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Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology

Li, Y. ; Sun, J. R. ; Zhao, J. L. ; Shen, B. G.

Journal of applied physics, 2013-10, Vol.114 (15) [Periódico revisado por pares]

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6
Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study
Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study
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Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study

Rienäcker, Michael ; Borkenhagen, Benjamin ; Lilienkamp, Gerhard ; Daum, Winfried

Journal of applied physics, 2015-08, Vol.118 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Growth of Ni and Ni-Cr alloy thin films on MgO(001): Effect of alloy composition on surface morphology
Growth of Ni and Ni-Cr alloy thin films on MgO(001): Effect of alloy composition on surface morphology
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Growth of Ni and Ni-Cr alloy thin films on MgO(001): Effect of alloy composition on surface morphology

Ramalingam, Gopalakrishnan ; Reinke, Petra

Journal of applied physics, 2016-12, Vol.120 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis
Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis
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Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis

Hirano, Atsuo ; Sakakima, Hiroki ; Hatano, Asuka ; Izumi, Satoshi

Journal of applied physics, 2024-03, Vol.135 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Origins of epitaxial macro-terraces and macro-steps on GaN substrates
Origins of epitaxial macro-terraces and macro-steps on GaN substrates
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Origins of epitaxial macro-terraces and macro-steps on GaN substrates

Liao, Michael E. ; Olsen, William L. ; Huynh, Kenny ; Luccioni, Dorian P. ; Wang, Yekan ; Huang, XianRong ; Wojcik, Michael J. ; Allerman, Andrew A. ; Goorsky, Mark S.

Journal of applied physics, 2023-05, Vol.133 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
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Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface

Tabuchi, Yuki ; Ashida, Koji ; Sonoda, Masashi ; Kaneko, Tadaaki ; Ohtani, Noboru ; Katsuno, Masakazu ; Sato, Shinya ; Tsuge, Hiroshi ; Fujimoto, Tatsuo

Journal of applied physics, 2017-08, Vol.122 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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