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Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate
Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate
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Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

Liang, B. L ; Wong, P. S ; Dorogan, B. V. G ; Tatebayashi, J ; Albrecht, A. R ; Xiang, H ; Mazur, Yu. I ; Salamo, G. J ; Brueck, S. R. J ; Huffaker, D. L

Proceedings of SPIE, the International Society for Optical Engineering, 2009, Vol.7224, p.722409-722409-9

Bellingham, Wash: SPIE

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2
Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
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Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers

Kim, D ; Tang, M ; Wu, J ; Hatch, S ; Maidaniuk, Y ; Dorogan, V ; Mazur, YI ; Salamo, GJ ; Liu, H

EDP Sciences 2017

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3
Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers
Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers
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Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers

Kim, D ; Tang, M ; Wu, J ; Hatch, S ; Maidaniuk, Y ; Dorogan, V ; Mazur, YI ; Salamo, GJ ; Liu, H

Society of Photo-Optical Instrumentation Engineers (SPIE) 2017

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4
New structure of photoreceivers for optic communications
New structure of photoreceivers for optic communications
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New structure of photoreceivers for optic communications

DOROGAN, Valerian V ; VIERU, Tatiana S ; DOROGAN, Andrei V

SPIE proceedings series, 2005, p.109-119

Bellingham WA: SPIE

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5
Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD
Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD
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Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD

Wong, P.S. ; Liang, B.L. ; Nuntawong, N. ; Tatebayashi, J. ; Huffaker, D.L. ; Dorogan, V.G. ; Mazur, Yu.I. ; Salamo, G.J.

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science, 2008, p.1-2

IEEE

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6
Photoreceivers With New Functional Properties
Photoreceivers With New Functional Properties
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Photoreceivers With New Functional Properties

Todos, P. ; Dorogan, V. ; Brynzari, V. ; Vieru, T. ; Kosyak, V.

Proceedings of the 6th International Conference on Optimization of Electrical and Electronic Equipments, 1998, Vol.3, p.625-628

IEEE

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7
Selective receivers of optic signals transferred through atmosphere
Selective receivers of optic signals transferred through atmosphere
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Selective receivers of optic signals transferred through atmosphere

DOROGAN, Valerian V ; VIERU, Tatiana S

SPIE proceedings series, 2005, p.120-127

Bellingham WA: SPIE

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8
Photodetector with controlled photosensitivity in 1.1-1.6 /spl mu/m spectral range
Photodetector with controlled photosensitivity in 1.1-1.6 /spl mu/m spectral range
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Photodetector with controlled photosensitivity in 1.1-1.6 /spl mu/m spectral range

Snigur, A. ; Brinzari, V. ; Dorogan, V. ; Korotchenkov, G. ; Savastru, R.

1995 International Semiconductor Conference. CAS '95 Proceedings, 1995, p.429-432

IEEE

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9
Study on the manufacturing technology of GaP-SnO/sub 2/ structures for ultraviolet radiation sensors
Study on the manufacturing technology of GaP-SnO/sub 2/ structures for ultraviolet radiation sensors
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Study on the manufacturing technology of GaP-SnO/sub 2/ structures for ultraviolet radiation sensors

Dorogan, V. ; Ivashchenco, A. ; Snigur, A. ; Shchurova, O. ; Vieru, T.

1995 International Semiconductor Conference. CAS '95 Proceedings, 1995, p.469-472

IEEE

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10
Spectral selective (/spl lambda/= 1.06 /spl mu/m) infrared detectors and quadrants
Spectral selective (/spl lambda/= 1.06 /spl mu/m) infrared detectors and quadrants
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Spectral selective (/spl lambda/= 1.06 /spl mu/m) infrared detectors and quadrants

Dorogan, V. ; Snigur, A. ; Brinzari, V. ; Kosyak, V. ; Korotchenkov, G.

Conference on Lasers and Electro-Optics Europe, 1994, p.338-338

IEEE

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