Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structureLin, A ; Liang, B L ; Dorogan, V G ; Mazur, Yu I ; Tarasov, G G ; Salamo, G J ; Huffaker, D LNanotechnology, 2013-02, Vol.24 (7), p.075701-075701 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
2 |
Material Type: Artigo
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Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructuresSteele, J. A ; Horvat, J ; Lewis, R. A ; Henini, M ; Fan, D ; Mazur, Yu. I ; Dorogan, V. G ; Grant, P. C ; Yu, S.-Q ; Salamo, G. JNanoscale, 2015-12, Vol.7 (48), p.2442-245 [Periódico revisado por pares]EnglandTexto completo disponível |
3 |
Material Type: Artigo
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Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II TransitionHE, J ; REYNER, C. J ; MAZUR, Yu. I ; SALAMO, G. J ; LIANG, B. L ; NUNNA, K ; HUFFAKER, D. L ; PAVARELLI, N ; GRADKOWSKI, K ; OCHALSKI, T. J ; HUYET, G ; DOROGAN, V. GNano letters, 2010-08, Vol.10 (8), p.3052-3056 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
4 |
Material Type: Artigo
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Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1−xBix/GaAs heterostructuresMazur, Yu I ; Dorogan, V G ; de Souza, L D ; Fan, D ; Benamara, M ; Schmidbauer, M ; Ware, M E ; Tarasov, G G ; Yu, S-Q ; Marques, G E ; Salamo, G JNanotechnology, 2014-01, Vol.25 (3), p.035702-035702 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
5 |
Material Type: Artigo
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Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructureMazur, Yu I ; Dorogan, V G ; Schmidbauer, M ; Tarasov, G G ; Johnson, S R ; Lu, X ; Yu, S-Q ; Wang, Zh M ; Tiedje, T ; Salamo, G JNanotechnology, 2011-09, Vol.22 (37), p.375703-1-6 [Periódico revisado por pares]EnglandTexto completo disponível |
6 |
Material Type: Artigo
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Photoconductivity peculiarities in InGaAs quantum wire heterostructures: anisotropy and high photoresponsivity at room temperatureKondratenko, S V ; Vakulenko, O V ; Kunets, Vas P ; Mazur, Yu I ; Dorogan, V G ; Ware, M E ; Salamo, G JSemiconductor science and technology, 2012-10, Vol.27 (10), p.105024 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
7 |
Material Type: Artigo
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Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structureWong, P S ; Liang, B L ; Dorogan, V G ; Albrecht, A R ; Tatebayashi, J ; He, X ; Nuntawong, N ; Mazur, Yu I ; Salamo, G J ; Brueck, S R J ; Huffaker, D LNanotechnology, 2008-10, Vol.19 (43), p.435710-435710 (5) [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
8 |
Material Type: Artigo
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Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfacesDorogan, V.G. ; Wang, Zh.M. ; Kunets, Vas.P. ; Schmidbauer, M. ; Xie, Y.Z. ; Teodoro, M.D. ; Lytvyn, P.M. ; Mazur, Yu.I. ; Salamo, G.J.Materials letters, 2011-05, Vol.65 (9), p.1427-1430 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas compositionLytvyn, P M ; Mazur, Yu I ; Marega Jr, E ; Dorogan, V G ; Kladko, V P ; Slobodian, M V ; Strelchuk, V V ; Hussein, M L ; Ware, M E ; Salamo, G JNanotechnology, 2008-12, Vol.19 (50), p.505605-505605 (7) [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
10 |
Material Type: Artigo
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Spectroscopy of shallow InAs/InP quantum wire nanostructuresMazur, Yu I ; Dorogan, V G ; Bierwagen, O ; Tarasov, G G ; DeCuir Jr, E A ; Noda, S ; Zhuchenko, Z Ya ; Manasreh, M O ; Masselink, W T ; Salamo, G JNanotechnology, 2009-02, Vol.20 (6), p.065401-065401 (10) [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |