Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Carrier transfer in vertically stacked quantum ring-quantum dot chainsMazur, Yu. I. ; Lopes-Oliveira, V. ; de Souza, L. D. ; Lopez-Richard, V. ; Teodoro, M. D. ; Dorogan, V. G. ; Benamara, M. ; Wu, J. ; Tarasov, G. G. ; Marega, E. ; Wang, Z. M. ; Marques, G. E. ; Salamo, G. J.Journal of applied physics, 2015-04, Vol.117 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
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Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructureMazur, Yu I ; Dorogan, V G ; Schmidbauer, M ; Tarasov, G G ; Johnson, S R ; Lu, X ; Yu, S-Q ; Wang, Zh M ; Tiedje, T ; Salamo, G JNanotechnology, 2011-09, Vol.22 (37), p.375703-1-6 [Periódico revisado por pares]EnglandTexto completo disponível |
3 |
Material Type: Artigo
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Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structuresMazur, Yu I ; Dorogan, V G ; Ware, M E ; Marega, E Jr ; Lytvyn, P M ; Zhuchenko, Z Ya ; Tarasov, G G ; Salamo, G JJournal of applied physics, 2012-10, Vol.112 (8) [Periódico revisado por pares]United StatesTexto completo disponível |
4 |
Material Type: Artigo
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Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfacesDorogan, V.G. ; Wang, Zh.M. ; Kunets, Vas.P. ; Schmidbauer, M. ; Xie, Y.Z. ; Teodoro, M.D. ; Lytvyn, P.M. ; Mazur, Yu.I. ; Salamo, G.J.Materials letters, 2011-05, Vol.65 (9), p.1427-1430 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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InAs/InGaP quantum dot solar cells with an AlGaAs interlayerLam, P. ; Wu, J. ; Tang, M. ; Kim, D. ; Hatch, S. ; Ramiro, I. ; Dorogan, V.G. ; Benamara, M. ; Mazur, Y.I. ; Salamo, G.J. ; Wilson, J. ; Allison, R. ; Liu, H.Solar energy materials and solar cells, 2016-01, Vol.144, p.96-101 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructuresMazur, Yu I. ; Dorogan, V. G. ; Salamo, G. J. ; Tarasov, G. G. ; Liang, B. L. ; Reyner, C. J. ; Nunna, K. ; Huffaker, D. L.Applied physics letters, 2012-01, Vol.100 (3), p.033102-033102-4 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Strong excitation intensity dependence of the photoluminescence line shape in GaAs{sub 1-x}Bi{sub x} single quantum well samplesMazur, Yu. I. ; Dorogan, V. G. ; Ware, M. E. ; Salamo, G. J. ; Schmidbauer, M. ; Tarasov, G. G. ; Johnson, S. R. ; Lu, X. ; Yu, S.-Q. ; Tiedje, T.Journal of applied physics, 2013-04, Vol.113 (14) [Periódico revisado por pares]United StatesTexto completo disponível |
8 |
Material Type: Artigo
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Isotropic Hall effect and "freeze-in" of carriers in the InGaAs self-assembled quantum wiresKunets, Vas P. ; Prosandeev, S. ; Mazur, Yu I. ; Ware, M. E. ; Teodoro, M. D. ; Dorogan, V. G. ; Lytvyn, P. M. ; Salamo, G. J.Journal of applied physics, 2011-10, Vol.110 (8), p.083714-083714-8 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a MaskJihoon Lee ; Wang, Z M ; Hirono, Y ; Dorogan, V G ; Mazur, Y I ; Eun-Soo Kim ; Sang-Mo Koo ; Seunghyun Park ; Sangmin Song ; Salamo, G JIEEE transactions on nanotechnology, 2011-05, Vol.10 (3), p.600-605 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
10 |
Material Type: Artigo
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Deep traps in GaAs/InGaAs quantum wells and quantum dots,studied by noise spectroscopyKunets, Vas P. ; Morgan, T. Al ; Mazur, Yu I. ; Dorogan, V. G. ; Lytvyn, P. M. ; Ware, M. E. ; Guzun, D. ; Shultz, J. L. ; Salamo, G. J.Journal of applied physics, 2008-11, Vol.104 (10), p.103709-103709-8 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |