Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Carrier transfer in vertically stacked quantum ring-quantum dot chainsMazur, Yu. I. ; Lopes-Oliveira, V. ; de Souza, L. D. ; Lopez-Richard, V. ; Teodoro, M. D. ; Dorogan, V. G. ; Benamara, M. ; Wu, J. ; Tarasov, G. G. ; Marega, E. ; Wang, Z. M. ; Marques, G. E. ; Salamo, G. J.Journal of applied physics, 2015-04, Vol.117 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structureLin, A ; Liang, B L ; Dorogan, V G ; Mazur, Yu I ; Tarasov, G G ; Salamo, G J ; Huffaker, D LNanotechnology, 2013-02, Vol.24 (7), p.075701-075701 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chainsKondratenko, S. V. ; Vakulenko, O. V. ; Mazur, Yu. I. ; Dorogan, V. G. ; Marega, E. ; Benamara, M. ; Ware, M. E. ; Salamo, G. J.Journal of applied physics, 2014-11, Vol.116 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II TransitionHE, J ; REYNER, C. J ; MAZUR, Yu. I ; SALAMO, G. J ; LIANG, B. L ; NUNNA, K ; HUFFAKER, D. L ; PAVARELLI, N ; GRADKOWSKI, K ; OCHALSKI, T. J ; HUYET, G ; DOROGAN, V. GNano letters, 2010-08, Vol.10 (8), p.3052-3056 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structuresMazur, Yu I ; Dorogan, V G ; Ware, M E ; Marega, E Jr ; Lytvyn, P M ; Zhuchenko, Z Ya ; Tarasov, G G ; Salamo, G JJournal of applied physics, 2012-10, Vol.112 (8) [Periódico revisado por pares]United StatesTexto completo disponível |
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6 |
Material Type: Artigo
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InAs/InGaP quantum dot solar cells with an AlGaAs interlayerLam, P. ; Wu, J. ; Tang, M. ; Kim, D. ; Hatch, S. ; Ramiro, I. ; Dorogan, V.G. ; Benamara, M. ; Mazur, Y.I. ; Salamo, G.J. ; Wilson, J. ; Allison, R. ; Liu, H.Solar energy materials and solar cells, 2016-01, Vol.144, p.96-101 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructuresMazur, Yu I. ; Dorogan, V. G. ; Salamo, G. J. ; Tarasov, G. G. ; Liang, B. L. ; Reyner, C. J. ; Nunna, K. ; Huffaker, D. L.Applied physics letters, 2012-01, Vol.100 (3), p.033102-033102-4 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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1.3 mu m InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 degree CChen, S M ; Tang, M C ; Wu, J ; Jiang, Q ; Dorogan, V G ; Benamara, M ; Mazur, Y I ; Salamo, G J ; Seeds, A J ; Liu, HElectronics letters, 2014-09, Vol.50 (20), p.1-1 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructuresSyrbu, N.N. ; Dorogan, V. ; Dorogan, A. ; Vieru, T. ; Ursaki, V.V. ; Zalamai, V.V.Superlattices and microstructures, 2012-10, Vol.52 (4), p.738-749Elsevier LtdTexto completo disponível |
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10 |
Material Type: Artigo
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Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a MaskJihoon Lee ; Wang, Z M ; Hirono, Y ; Dorogan, V G ; Mazur, Y I ; Eun-Soo Kim ; Sang-Mo Koo ; Seunghyun Park ; Sangmin Song ; Salamo, G JIEEE transactions on nanotechnology, 2011-05, Vol.10 (3), p.600-605 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |