Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bondingRossel, C. ; Weigele, P. ; Czornomaz, L. ; Daix, N. ; Caimi, D. ; Sousa, M. ; Fompeyrine, J.Solid-state electronics, 2014-08, Vol.98, p.88-92 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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SrHfO3 as gate dielectric for future CMOS technologyROSSEL, C ; SOUSA, M ; GERMANN, R ; TAPPONNIER, A ; BABICH, K ; MARCHIORI, C ; FOMPEYRINE, J ; WEBB, D ; CAIMI, D ; MEREU, B ; ISPAS, A ; LOCQUET, J. P ; SIEGWART, HMicroelectronic engineering, 2007-09, Vol.84 (9-10), p.1869-1873 [Periódico revisado por pares]Amsterdam: Elsevier ScienceTexto completo disponível |
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3 |
Material Type: Artigo
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1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAsEl Kazzi, M. ; Webb, D.J. ; Czornomaz, L. ; Rossel, C. ; Gerl, C. ; Richter, M. ; Sousa, M. ; Caimi, D. ; Siegwart, H. ; Fompeyrine, J. ; Marchiori, C.Microelectronic engineering, 2011-07, Vol.88 (7), p.1066-1069 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Epitaxial germanium-on-insulator grown on (001) SiSeo, J.W. ; Dieker, Ch ; Tapponnier, A. ; Marchiori, Ch ; Sousa, M. ; Locquet, J.-P. ; Fompeyrine, J. ; Ispas, A. ; Rossel, C. ; Panayiotatos, Y. ; Sotiropoulos, A. ; Dimoulas, A.Microelectronic engineering, 2007-09, Vol.84 (9), p.2328-2331 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devicesAndersson, C. ; Rossel, C. ; Sousa, M. ; Webb, D.J. ; Marchiori, C. ; Caimi, D. ; Siegwart, H. ; Panayiotatos, Y. ; Dimoulas, A. ; Fompeyrine, J.Microelectronic engineering, 2009-07, Vol.86 (7), p.1635-1637 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Ata de Congresso
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Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the fully recessed gate architectureLe Royer, Cyrille ; Mohamad, Blend ; Biscarrat, Jérôme ; Vauche, Laura ; Escoffier, René ; Buckley, Julien ; Becu, Stéphane ; Riat, Rémi ; Gillot, Charlotte ; Charles, Matthew ; Ruel, Simon ; Pimenta-Barros, Patricia ; Posseme, Nicolas ; Besson, Pascal ; Boudaa, Frederic ; Vannuffel, Cyril ; Vandendaele, William ; Viey, Abygaël ; Krakovinsky, Alexis ; Jaud, Marie-Anne ; Modica, R. ; Iucolano, F. ; Le Tiec, Rémi ; Levi, Shimon ; Orsatelli, Marc ; Gwoziecki, Romain ; Sousa, Véronique2022Sem texto completo |
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7 |
Material Type: Artigo
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Microstructure and electrical properties of (Ta, Co, Pr) doped TiO2 based electroceramicsSousa, V. C. ; Oliveira, M. M. ; Orlandi, M. O. ; Longo, E.Journal of materials science. Materials in electronics, 2010-03, Vol.21 (3), p.246-251 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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8 |
Material Type: Artigo
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Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devicesSuri, M. ; Bichler, O. ; Hubert, Q. ; Perniola, L. ; Sousa, V. ; Jahan, C. ; Vuillaume, D. ; Gamrat, C. ; DeSalvo, B.Solid-state electronics, 2013-01, Vol.79, p.227-232 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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9 |
Material Type: Artigo
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Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memoriesde Sousa, J S ; Peibst, R ; Erenburg, M ; Bugiel, E ; Farias, G A ; Leburton, Jean-Pierre ; Hofmann, K RIEEE transactions on electron devices, 2011-02, Vol.58 (2), p.376-383 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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(Ta, Cr)-doped TiO2 electroceramic systemsDE SOUSA, V. C ; OLIVEIRA, M. M ; ORLANDI, M ; LEITE, E. R ; LONGO, EJournal of materials science. Materials in electronics, 2006, Vol.17 (1), p.79-84 [Periódico revisado por pares]Norwell, MA: SpringerTexto completo disponível |