Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Indication of current-injection lasing from an organic semiconductorSandanayaka, Atula S. D. ; Matsushima, Toshinori ; Bencheikh, Fatima ; Terakawa, Shinobu ; Potscavage, William J. ; Qin, Chuanjiang ; Fujihara, Takashi ; Goushi, Kenichi ; Ribierre, Jean-Charles ; Adachi, ChihayaApplied physics express, 2019-06, Vol.12 (6), p.61010 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
2 |
Material Type: Artigo
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A 271.8 nm deep-ultraviolet laser diode for room temperature operationZhang, Ziyi ; Kushimoto, Maki ; Sakai, Tadayoshi ; Sugiyama, Naoharu ; Schowalter, Leo J. ; Sasaoka, Chiaki ; Amano, HiroshiApplied physics express, 2019-11, Vol.12 (12), p.124003 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
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Development of X-ray-induced afterglow characterization systemYanagida, Takayuki ; Fujimoto, Yutaka ; Ito, Takashi ; Uchiyama, Koro ; Mori, KuniyoshiApplied physics express, 2014-06, Vol.7 (6), p.62401 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction lossMaekawa, Takeru ; Kanaya, Hidetoshi ; Suzuki, Safumi ; Asada, MasahiroApplied physics express, 2016-02, Vol.9 (2), p.24101 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDsHwang, David ; Mughal, Asad ; Pynn, Christopher D. ; Nakamura, Shuji ; DenBaars, Steven P.Applied physics express, 2017-03, Vol.10 (3), p.32101 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Current status of Ga2O3 power devicesHigashiwaki, Masataka ; Murakami, Hisashi ; Kumagai, Yoshinao ; Kuramata, AkitoJapanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layerKashima, Yukio ; Maeda, Noritoshi ; Matsuura, Eriko ; Jo, Masafumi ; Iwai, Takeshi ; Morita, Toshiro ; Kokubo, Mitsunori ; Tashiro, Takaharu ; Kamimura, Ryuichiro ; Osada, Yamato ; Takagi, Hideki ; Hirayama, HidekiApplied physics express, 2018-01, Vol.11 (1), p.12101 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Material science and device physics in SiC technology for high-voltage power devicesKimoto, TsunenobuJapanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.40103-1-040103-27 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Efficiency enhancement using a Zn1−xGex-O thin film as an n-type window layer in Cu2O-based heterojunction solar cellsMinami, Tadatsugu ; Nishi, Yuki ; Miyata, ToshihiroApplied physics express, 2016-05, Vol.9 (5) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Development of InGaN-based red LED grown on (0001) polar surfaceHwang, Jong-Il ; Hashimoto, Rei ; Saito, Shinji ; Nunoue, ShinyaApplied physics express, 2014-07, Vol.7 (7), p.71003 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |