skip to main content
Idioma:
Mostrar Somente
Refinado por: assunto: Electronics remover assunto: Physics, Applied remover Physics remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Vertically high-density interconnection for mobile application
Vertically high-density interconnection for mobile application
Material Type:
Artigo 		Adicionar ao Meu Espaço

Vertically high-density interconnection for mobile application

Katahira, Takayoshi ; Kartio, Ilkka ; Segawa, Hiroshi ; Takahashi, Michimasa ; Sagisaka, Katsumi

Microelectronics and reliability, 2006-05, Vol.46 (5), p.756-762 [Periódico revisado por pares]

Oxford: Elsevier Ltd

Texto completo disponível

Citações Citado por
2
Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film
Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film
Material Type:
Artigo 		Adicionar ao Meu Espaço

Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film

MARUYAMA, H ; KOSAI, N ; SATO, T ; SAGISAKA, S ; SEGAWA, H ; SHIMIDZU, T ; TANAKA, K

Japanese Journal of Applied Physics, 1997, Vol.36 (12A), p.7312-7316 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

Texto completo disponível

Citações Citado por
3
Changes in effective work function of HfxRu1-x alloy gate electrode
Changes in effective work function of HfxRu1-x alloy gate electrode
Material Type:
Artigo 		Adicionar ao Meu Espaço

Changes in effective work function of HfxRu1-x alloy gate electrode

NABATAME, T ; NUNOSHIGE, Y ; KADOSHIMA, M ; TAKABA, H ; SEGAWA, K ; KIMURA, S ; SATAKE, H ; OTA, H ; OHISHI, T ; TORIUMI, A

Microelectronic engineering, 2008-07, Vol.85 (7), p.1524-1528 [Periódico revisado por pares]

Amsterdam: Elsevier Science

Texto completo disponível

Citações Citado por
4
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
Material Type:
Artigo 		Adicionar ao Meu Espaço

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

NABATAME, T ; SEGAWA, K ; KADOSHIMA, M ; TAKABA, H ; IWAMOTO, K ; KIMURA, S ; NUNOSHIGE, Y ; SATAKE, H ; OHISHI, T ; TORIUMI, Akira

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.975-979 [Periódico revisado por pares]

Oxford: Elsevier Science

Texto completo disponível

Citações Citado por
5
Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers
Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers
Material Type:
Artigo 		Adicionar ao Meu Espaço

Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers

Kikuchi, K. ; Goto, M. ; Nakagawa, H. ; Segawa, S. ; Tokoro, K. ; Taino, T. ; Myoren, H. ; Takada, S. ; Aoyagi, M.

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.94-97 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
6
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
Material Type:
Artigo 		Adicionar ao Meu Espaço

New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits

Kikuchi, K. ; Segawa, S. ; Eun-Sil Jung ; Nakagawa, H. ; Tokoro, K. ; Itatani, H. ; Aoyagi, M.

IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.119-122 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
7
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization

Aoyagi, Masahiro ; Segawa, Shigemasa ; Jung, EunSil ; Itatani, Taro ; Komuro, Masanori ; Sakamoto, Tsuenenori ; Itatani, Hiroshi ; Miyamura, Masataka ; Matsumoto, Shunichi

SPIE proceedings series, 2001, Vol.4345, p.1073-1078

Bellingham WA: SPIE

Texto completo disponível

Citações Citado por
8
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
Material Type:
Artigo 		Adicionar ao Meu Espaço

Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation

Hori, A. ; Hiroki, A. ; Nakaoka, H. ; Segawa, M. ; Hori, T.

IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.78-86 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
9
Performance of a chemically amplified positive resist for next-generation photomask fabrication
Performance of a chemically amplified positive resist for next-generation photomask fabrication
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Performance of a chemically amplified positive resist for next-generation photomask fabrication

Kurihara, Masa-aki ; Segawa, Toshikazu ; Okuno, Daichi ; Hayashi, Naoya ; Sano, Hisatake

SPIE proceedings series, 1998, Vol.3412, p.279-291

Bellingham WA: SPIE

Texto completo disponível

Citações Citado por
10
Influence of the c-axis orientation on the optical properties of thin CdS films formed by laser ablation
Influence of the c-axis orientation on the optical properties of thin CdS films formed by laser ablation
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Influence of the c-axis orientation on the optical properties of thin CdS films formed by laser ablation

DUSHKINA, N. M ; ULLRICH, B ; SAKAI, H ; EIJU, T ; SEGAWA, Y

SPIE proceedings series, 1999, p.424-432

Bellingham WA: SPIE

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Revistas revisadas por pares (9)

Refinar Meus Resultados

Tipo de Recurso 

  1. Artigos  (9)
  2. Anais de Congresso  (3)
  3. Mais opções open sub menu

Data de Publicação 

De até
Refinar
  1. Antes de1988  (2)
  2. 1988Até1996  (2)
  3. 1997Até1998  (2)
  4. 1999Até2003  (3)
  5. Após 2003  (4)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.