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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Gallium Nitrides remover
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Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
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Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Li, X. ; Bergsten, J. ; Nilsson, D. ; Danielsson, Ö. ; Pedersen, H. ; Rorsman, N. ; Janzén, E. ; Forsberg, U.

Applied physics letters, 2015-12, Vol.107 (26), p.262105 [Periódico revisado por pares]

Melville: American Institute of Physics

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2
High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes
High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes
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High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

Wu, Y. ; Hasan, T. ; Li, X. ; Xu, P. ; Wang, Y. ; Shen, X. ; Liu, X. ; Yang, Q.

Applied physics letters, 2015-02, Vol.106 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
The effect of symmetry on resonant and nonresonant photoresponses in a field-effect terahertz detector
The effect of symmetry on resonant and nonresonant photoresponses in a field-effect terahertz detector
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The effect of symmetry on resonant and nonresonant photoresponses in a field-effect terahertz detector

Sun, J. D. ; Qin, H. ; Lewis, R. A. ; Yang, X. X. ; Sun, Y. F. ; Zhang, Z. P. ; Li, X. X. ; Zhang, X. Y. ; Cai, Y. ; Wu, D. M. ; Zhang, B. S.

Applied physics letters, 2015-01, Vol.106 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Killat, N. ; Montes Bajo, M. ; Paskova, T. ; Evans, K. R. ; Leach, J. ; Li, X. ; Özgür, Ü. ; Morkoç, H. ; Chabak, K. D. ; Crespo, A. ; Gillespie, J. K. ; Fitch, R. ; Kossler, M. ; Walker, D. E. ; Trejo, M. ; Via, G. D. ; Blevins, J. D. ; Kuball, M.

Applied physics letters, 2013-11, Vol.103 (19), p.193507 [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects
Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects
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Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

Zhu, C. Y. ; Wu, M. ; Kayis, C. ; Zhang, F. ; Li, X. ; Ferreyra, R. A. ; Matulionis, A. ; Avrutin, V. ; Özgür, Ü. ; Morkoç, H.

Applied physics letters, 2012-09, Vol.101 (10) [Periódico revisado por pares]

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6
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
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Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth

Li, X. ; Bohn, P. W. ; Coleman, J. J.

Applied physics letters, 1999-12, Vol.75 (26), p.4049-4051 [Periódico revisado por pares]

United States

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7
Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth
Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth
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Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth

Li, X. ; Bohn, P. W. ; Kim, Jeongyong ; White, J. O. ; Coleman, J. J.

Applied physics letters, 2000-05, Vol.76 (21), p.3031-3033 [Periódico revisado por pares]

United States

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8
A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range
A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range
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A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range

Quach, P. ; Liu, S. F. ; Jollivet, A. ; Wang, D. ; Cheng, J. Y. ; Isac, N. ; Pirotta, S. ; Bouville, D. ; Sheng, S. S. ; Imran, A. ; Chen, L. ; Li, D. ; Zheng, X. T. ; Wang, Y. X. ; Qin, Z. X. ; Tchernycheva, M. ; Julien, F. H. ; Shen, B. ; Wang, X. Q.

Applied physics letters, 2020-04, Vol.116 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides
Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides
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Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides

Sun, Z. Y. ; Yan, Y. Q. ; Smith, T. B. ; Zhao, W. P. ; Li, J. ; Lin, J. Y. ; Jiang, H. X.

Applied physics letters, 2019-06, Vol.114 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy
Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy
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Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

Alemoush, Z. ; Hossain, N. K. ; Tingsuwatit, A. ; Almohammad, M. ; Li, J. ; Lin, J. Y. ; Jiang, H. X.

Applied physics letters, 2023-01, Vol.122 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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