skip to main content
Idioma:
Resultados 1 2 3 4 5 next page
Mostrar Somente
Refinado por: Base de dados/Biblioteca: ANTE: Abstracts in New Technology & Engineering remover tipo de recurso: magazinearticle remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Packaged Triplexer Based on Distributed Coupling Technique
Packaged Triplexer Based on Distributed Coupling Technique
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Packaged Triplexer Based on Distributed Coupling Technique

Wu, Jyun-Yi ; Tseng, Yu-Hsiang ; Tu, Wen-Hua

IEEE microwave magazine, 2012-01, Vol.13 (1), p.139-145

New York: IEEE

Texto completo disponível

Citações Citado por
2
The Wide World of Wide-area Measurement
The Wide World of Wide-area Measurement
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

The Wide World of Wide-area Measurement

Phadke, A.G. ; de Moraes, R.M.

IEEE power & energy magazine, 2008-09, Vol.6 (5), p.52-65

New York: IEEE

Texto completo disponível

Citações Citado por
3
High-Accuracy Localization for Assisted Living: 5G systems will turn multipath channels from foe to friend
High-Accuracy Localization for Assisted Living: 5G systems will turn multipath channels from foe to friend
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

High-Accuracy Localization for Assisted Living: 5G systems will turn multipath channels from foe to friend

Witrisal, Klaus ; Meissner, Paul ; Leitinger, Erik ; Yuan Shen ; Gustafson, Carl ; Tufvesson, Fredrik ; Haneda, Katsuyuki ; Dardari, Davide ; Molisch, Andreas F. ; Conti, Andrea ; Win, Moe Z.

IEEE signal processing magazine, 2016-03, Vol.33 (2), p.59-70

New York: IEEE

Texto completo disponível

Citações Citado por
4
Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration
Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration

Suk-Kyu Ryu ; Kuan-Hsun Lu ; Tengfei Jiang ; Jang-Hi Im ; Rui Huang ; Ho, P. S.

IEEE transactions on device and materials reliability, 2012-06, Vol.12 (2), p.255-262 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
5
Federated Learning: Challenges, Methods, and Future Directions
Federated Learning: Challenges, Methods, and Future Directions
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Federated Learning: Challenges, Methods, and Future Directions

Li, Tian ; Sahu, Anit Kumar ; Talwalkar, Ameet ; Smith, Virginia

IEEE signal processing magazine, 2020-05, Vol.37 (3), p.50-60

New York: IEEE

Texto completo disponível

Citações Citado por
6
Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions
Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions

Chenyue Ma ; Mattausch, Hans Jurgen ; Matsuzawa, Kazuya ; Yamaguchi, Seiichiro ; Hoshida, Teruhiko ; Imade, Masahiro ; Koh, Risho ; Arakawa, Takahiko ; Miura-Mattausch, Mitiko

IEEE transactions on device and materials reliability, 2014-09, Vol.14 (3), p.818-825 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
7
Prevention of Cracking From RDL Stress and Dicing Defects in Glass Substrates
Prevention of Cracking From RDL Stress and Dicing Defects in Glass Substrates
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Prevention of Cracking From RDL Stress and Dicing Defects in Glass Substrates

McCann, Scott ; Sato, Yoichiro ; Sundaram, Venkatesh ; Tummala, Rao R. ; Sitaraman, Suresh K.

IEEE transactions on device and materials reliability, 2016-03, Vol.16 (1), p.43-49 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
8
Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies
Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies

Quintero, P. O. ; McCluskey, F. P.

IEEE transactions on device and materials reliability, 2011-12, Vol.11 (4), p.531-539 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
9
Accelerated Life Test of High Brightness Light Emitting Diodes
Accelerated Life Test of High Brightness Light Emitting Diodes
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Accelerated Life Test of High Brightness Light Emitting Diodes

Trevisanello, L. ; Meneghini, M. ; Mura, G. ; Vanzi, M. ; Pavesi, M. ; Meneghesso, G. ; Zanoni, E.

IEEE transactions on device and materials reliability, 2008-06, Vol.8 (2), p.304-311 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
10
Random access for machine-to-machine communication in LTE-advanced networks: issues and approaches
Random access for machine-to-machine communication in LTE-advanced networks: issues and approaches
Material Type:
magazinearticle 		Adicionar ao Meu Espaço

Random access for machine-to-machine communication in LTE-advanced networks: issues and approaches

Hasan, Monowar ; Hossain, Ekram ; Niyato, Dusit

IEEE communications magazine, 2013-06, Vol.51 (6), p.86-93

New York: IEEE

Texto completo disponível

Citações Citado por
Resultados 1 2 3 4 5 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Revistas revisadas por pares (896)

Data de Publicação 

De até
Refinar
  1. Antes de1994  (281)
  2. 1994Até2000  (1.238)
  3. 2001Até2007  (3.986)
  4. 2008Até2015  (4.944)
  5. Após 2015  (2.472)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.