Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Challenges and Applications of Emerging Nonvolatile Memory DevicesBanerjee, WritamElectronics (Basel), 2020-06, Vol.9 (6), p.1029 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
2 |
Material Type: Artigo
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SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the EdgeLi, Haitong ; Chen, Wei-Chen ; Levy, Akash ; Wang, Ching-Hua ; Wang, Hongjie ; Chen, Po-Han ; Wan, Weier ; Khwa, Win-San ; Chuang, Harry ; Chih, Y.-D. ; Chang, Meng-Fan ; Wong, H.-S. Philip ; Raina, PriyankaIEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAMKang, Wang ; Wang, Haotian ; Wang, Zhaohao ; Zhang, Youguang ; Zhao, WeishengIEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access MemoryMondal, Debashis ; Singh, Arun ; Bhatt, Shubham ; Mishra, RahulIEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6318-6323 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel JunctionsWang, Kang L. ; Hochul Lee ; Amiri, Pedram KhaliliIEEE transactions on nanotechnology, 2015-11, Vol.14 (6), p.992-997 [Periódico revisado por pares]New York: IEEETexto completo disponível |
6 |
Material Type: Artigo
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Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)Lee, Jae Seong ; Choi, Woo YoungIEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4903-4909 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN RecoveryAlahmadi, Abdulhadi ; Chung, Tae SunElectronics (Basel), 2024-02, Vol.13 (4), p.707 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
8 |
Material Type: Artigo
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BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage OperationChen, Ying-Chen ; Lin, Chao-Cheng ; Lin, Chang-Hsien ; Chang, Yao-FengIEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1042-1047 [Periódico revisado por pares]New York: IEEETexto completo disponível |
9 |
Material Type: Artigo
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Dynamic Power Reduction in TCAM Using Advanced Selective Pre-Charging of Match LinesDoo, Su-Yeon ; Kwon, Kee-WonElectronics (Basel), 2023-09, Vol.12 (17), p.3691 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
10 |
Material Type: Artigo
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A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS MemoryYang, Zhi ; He, Kuiqing ; Zhang, Zeqing ; Lu, Yao ; Li, Zheng ; Wang, Yijiao ; Wang, Zhaohao ; Zhao, WeishengIEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1698-1705 [Periódico revisado por pares]New York: IEEETexto completo disponível |