Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory SystemsMittal, Sparsh ; Vetter, Jeffrey S.IEEE transactions on parallel and distributed systems, 2016-05, Vol.27 (5), p.1537-1550 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Metal-Oxide RRAMWong, H.-S. Philip ; Lee, Heng-Yuan ; Yu, Shimeng ; Chen, Yu-Sheng ; Wu, Yi ; Chen, Pang-Shiu ; Lee, Byoungil ; Chen, Frederick T. ; Tsai, Ming-JinnProceedings of the IEEE, 2012-06, Vol.100 (6), p.1951-1970 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Challenges and Applications of Emerging Nonvolatile Memory DevicesBanerjee, WritamElectronics (Basel), 2020-06, Vol.9 (6), p.1029 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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4 |
Material Type: Livro
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Smart Materials in Additive Manufacturing. Volume 2 4D Printing Mechanics, Modeling, and Advanced Engineering ApplicationsElsevier 2022Texto completo disponível |
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5 |
Material Type: Artigo
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Radiation Effects in Advanced and Emerging Nonvolatile MemoriesMarinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.546-572 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Platform Storage Performance With 3D XPoint TechnologyHady, Frank T. ; Foong, Annie ; Veal, Bryan ; Williams, DanProceedings of the IEEE, 2017-09, Vol.105 (9), p.1822-1833 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile MemoryXiangyu Dong ; Cong Xu ; Yuan Xie ; Jouppi, N. P.IEEE transactions on computer-aided design of integrated circuits and systems, 2012-07, Vol.31 (7), p.994-1007 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAMKang, Wang ; Wang, Haotian ; Wang, Zhaohao ; Zhang, Youguang ; Zhao, WeishengIEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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An Overview of Computing-in-Memory Circuits With DRAM and NVMKim, Sangjin ; Yoo, Hoi-JunIEEE transactions on circuits and systems. II, Express briefs, 2024-03, Vol.71 (3), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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In-Memory Computing With Double Word Lines and Three Read Ports for Four OperandsLin, Zhiting ; Zhan, Honglan ; Li, Xuan ; Peng, Chunyu ; Lu, Wenjuan ; Wu, Xiulong ; Chen, JunningIEEE transactions on very large scale integration (VLSI) systems, 2020-05, Vol.28 (5), p.1316-1320 [Periódico revisado por pares]New York: IEEETexto completo disponível |