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D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light
D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light
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D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light

2005

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12
D4260 Standard Practice for Liquid and Gelled Acid Etching of Concrete
D4260 Standard Practice for Liquid and Gelled Acid Etching of Concrete
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D4260 Standard Practice for Liquid and Gelled Acid Etching of Concrete

2005

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13
F80 Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)
F80 Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)
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F80 Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)

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14
IEEE Standard General Requirements and Test Code for Dry-Type and Oil-Immersed Smoothing Reactors and for Dry-Type Converter Reactors for DC Power Transmission
IEEE Standard General Requirements and Test Code for Dry-Type and Oil-Immersed Smoothing Reactors and for Dry-Type Converter Reactors for DC Power Transmission
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IEEE Standard General Requirements and Test Code for Dry-Type and Oil-Immersed Smoothing Reactors and for Dry-Type Converter Reactors for DC Power Transmission

IEEE Std 1277-2020 (Revision of IEEE Std 1277-2010), 2020, p.1-90

IEEE

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15
Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions
Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions
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Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions

Keding, Roman ; Stuwe, David ; Kamp, Mathias ; Reichel, Christian ; Wolf, Andreas ; Woehl, Robert ; Borchert, Dietmar ; Reinecke, Holger ; Biro, Daniel

Photovoltaics, IEEE Journal of, 2013, Vol.3, p.1236-1242

IEEE

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16
F518 Practice for Determining Effective Adhesion of Photoresist to Hard-Surface Photomask Banks and Semiconductor Wafers During Etching (Withdrawn 1996)
F518 Practice for Determining Effective Adhesion of Photoresist to Hard-Surface Photomask Banks and Semiconductor Wafers During Etching (Withdrawn 1996)
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F518 Practice for Determining Effective Adhesion of Photoresist to Hard-Surface Photomask Banks and Semiconductor Wafers During Etching (Withdrawn 1996)

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17
D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light
D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light
Material Type:
Standard 		Adicionar ao Meu Espaço

D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light

2001

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18
D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light
D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light
Material Type:
Standard 		Adicionar ao Meu Espaço

D5671 Standard Practice for Polishing and Etching Coal Samples for Microscopical Analysis by Reflected Light

2001

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19
F1809 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon (Withdrawn 2003)
F1809 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon (Withdrawn 2003)
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F1809 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon (Withdrawn 2003)

2002

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20
IEEE Draft Recommended Practice for Establishing Liquid-Immersed and Dry-Type Power and Distribution Transformer Capability When Supplying Nonsinusoidal Load Currents
IEEE Draft Recommended Practice for Establishing Liquid-Immersed and Dry-Type Power and Distribution Transformer Capability When Supplying Nonsinusoidal Load Currents
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IEEE Draft Recommended Practice for Establishing Liquid-Immersed and Dry-Type Power and Distribution Transformer Capability When Supplying Nonsinusoidal Load Currents

IEEE PC57.110/D6.2, March 2018, 2018, p.1-71

IEEE

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