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Material Type: Relatório Técnico
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Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12'P. A. Venegas D. J Garcia; G Cabrera; M. A Avila; C Rettori; Fernando Assis GarciaSão Paulo 2016Acesso online |