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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Overview of emerging nonvolatile memory technologiesMeena, Jagan Singh ; Sze, Simon Min ; Chand, Umesh ; Tseng, Tseung-YuenNanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526 [Periódico revisado por pares]New York: Springer New YorkTexto completo disponível |
| 2 |
Material Type: Artigo
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Data Allocation Optimization for Hybrid Scratch Pad Memory With SRAM and Nonvolatile MemoryJingtong Hu ; Xue, C. J. ; Qingfeng Zhuge ; Wei-Che Tseng ; Sha, E. H.IEEE transactions on very large scale integration (VLSI) systems, 2013-06, Vol.21 (6), p.1094-1102 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 3 |
Material Type: Artigo
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Recent progress in resistive random access memories: Materials, switching mechanisms, and performancePan, F. ; Gao, S. ; Chen, C. ; Song, C. ; Zeng, F.Materials science & engineering. R, Reports : a review journal, 2014-09, Vol.83, p.1-59 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 4 |
Material Type: Artigo
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SRAM Compilation and Placement Co-Optimization for Memory SubsystemsLiu, BiweiElectronics (Basel), 2023-03, Vol.12 (6), p.1353 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
| 5 |
Material Type: Artigo
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A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating SchemeOhsawa, Takashi ; Koike, Hiroki ; Miura, Sadahiko ; Honjo, Hiroaki ; Kinoshita, Keizo ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, TetsuoIEEE journal of solid-state circuits, 2013-06, Vol.48 (6), p.1511-1520 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 6 |
Material Type: Artigo
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Parallelism-Aware Channel Partition for Read/Write Interference Mitigation in Solid-State DrivesLim, Hyun Jo ; Shin, Dongkun ; Han, Tae HeeElectronics (Basel), 2022-12, Vol.11 (23), p.4048 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
| 7 |
Material Type: Artigo
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A Spintronic 2M/7T Computation-in-Memory CellJafari, Atousa ; Münch, Christopher ; Tahoori, MehdiJournal of low power electronics and applications, 2022-12, Vol.12 (4), p.63 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
| 8 |
Material Type: Artigo
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Exploring FPGA Logic Block Architecture for Reduced Configuration MemoryHUSSAIN, F. ; IQBAL, M. M. ; PARVEZ, H. ; RASHID, M.Advances in Electrical and Computer Engineering, 2022-08, Vol.22 (3), p.15-24 [Periódico revisado por pares]Suceava: Stefan cel Mare University of SuceavaTexto completo disponível |
| 9 |
Material Type: Artigo
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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and ApplicationsZahoor, Furqan ; Azni Zulkifli, Tun Zainal ; Khanday, Farooq AhmadNanoscale research letters, 2020-04, Vol.15 (1), p.90-90, Article 90 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 10 |
Material Type: Artigo
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LazyRS: Improving the Performance and Reliability of High-Capacity TLC/QLC Flash-Based Storage Systems Using Lazy ReprogrammingKim, Beomjun ; Kim, MyungsukElectronics (Basel), 2023-02, Vol.12 (4), p.843 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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