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1
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

S. Martini (Sandro) A. A Quivy (Alain André); A Tabata; J. R Leite (José Roberto)

Journal of Applied Physics Woodbury v. 90, n. 5, p. 2280-2289, 2001

Woodbury 2001

Acesso online

2
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

S. Martini (Sandro) A. A Quivy (Alain André); A Tabata; J. R Leite (José Roberto)

Journal of Applied Physics Woodbury v. 90, n. 5, p. 2280-2289, 2001

Woodbury 2001

Acesso online

3
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Material Type:
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Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

S Martini A. A Quivy (Alain André); M J da Silva; T E Lamas; E C F da Silva; J. R Leite (José Roberto); E Abramof

Journal of Applied Physics v. 94, n. 11, p. 7050-7052, 2003

New york 2003

Acesso online

4
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Material Type:
Artigo 		Adicionar ao Meu Espaço

Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

S Martini A. A Quivy (Alain André); M J da Silva; T E Lamas; E C F da Silva; J. R Leite (José Roberto); E Abramof

Journal of Applied Physics v. 94, n. 11, p. 7050-7052, 2003

New york 2003

Acesso online

5
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
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Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

C A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E Lauretto

Journal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003

Woodbury 2003

Acesso online

6
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

C A Duarte Euzi Conceicao Fernandes da Silva; A. A Quivy (Alain André); M J da Silva; S Martini; J. R Leite (José Roberto); E A Meneses; E Lauretto

Journal of Applied Physics Woodbury v. 93, n. 10, p. 6279-6283, 2003

Woodbury 2003

Acesso online

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Autor/Criador 

  1. Silva, E  (4)
  2. Silva, M  (4)
  3. Duarte, C  (2)
  4. Meneses, E  (2)
  5. Lauretto, E  (2)
  6. Lamas, T  (2)
  7. Tabata, A  (2)
  8. Abramof, E  (2)
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Deste Autor:

  1. Martini, S
  2. Leite, J
  3. Quivy, A
  4. Silva, E
  5. Silva, M

Neste Assunto:

  1. Estrutura Eletrônica
  2. Difração Por Raios X
  3. Fotoluminescência
  4. Matéria Condensada
  5. Microscopia Eletrônica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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