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1/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives
1/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives
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1/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

BENEVENTI, Giovanni Betti ; FERRO, Massimo ; FANTINI, Paolo

IEEE electron device letters, 2012-11, Vol.33 (11), p.1559-1561 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

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2
Energy Landscape Model of Conduction and Phase Transition in Phase Change Memories
Energy Landscape Model of Conduction and Phase Transition in Phase Change Memories
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Energy Landscape Model of Conduction and Phase Transition in Phase Change Memories

Rizzi, Maurizio ; Ferro, Massimo ; Fantini, Paolo ; Ielmini, Daniele

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3618-3624 [Periódico revisado por pares]

New York, NY: IEEE

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3
Understanding Overreset Transition in Phase-Change Memory Characteristics
Understanding Overreset Transition in Phase-Change Memory Characteristics
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Understanding Overreset Transition in Phase-Change Memory Characteristics

Calderoni, A. ; Ferro, M. ; Varesi, E. ; Fantini, P. ; Rizzi, M. ; Ielmini, D.

IEEE electron device letters, 2012-09, Vol.33 (9), p.1267-1269 [Periódico revisado por pares]

New York, NY: IEEE

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4
Experimental Qualification of the Hybrid Circuit Breaker Developed for JT-60SA Quench Protection Circuit
Experimental Qualification of the Hybrid Circuit Breaker Developed for JT-60SA Quench Protection Circuit
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Experimental Qualification of the Hybrid Circuit Breaker Developed for JT-60SA Quench Protection Circuit

Maistrello, Alberto ; Gaio, Elena ; Ferro, Alberto ; Perna, Mauro ; Panizza, Carlo ; Soso, Francesco ; Novello, Luca ; Matsukawa, Makoto ; Yamauchi, Kunihito

IEEE transactions on applied superconductivity, 2014-06, Vol.24 (3), p.1-5 [Periódico revisado por pares]

New York, NY: IEEE

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5
A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State
A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State
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A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

Calderoni, Alessandro ; Ferro, Massimo ; Ielmini, Daniele ; Fantini, Paolo

IEEE electron device letters, 2010-09, Vol.31 (9), p.1023-1025 [Periódico revisado por pares]

New York, NY: IEEE

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6
Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients
Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients
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Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients

Betti Beneventi, Giovanni ; Ferro, Massimo ; Calderoni, Alessandro ; Fantini, Paolo

IEEE electron device letters, 2013-07, Vol.34 (7), p.879-881 [Periódico revisado por pares]

New York, NY: IEEE

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7
A floating CMOS bandgap voltage reference for differential applications
A floating CMOS bandgap voltage reference for differential applications
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A floating CMOS bandgap voltage reference for differential applications

Ferro, M. ; Salerno, F. ; Castello, R.

IEEE journal of solid-state circuits, 1989-06, Vol.24 (3), p.690-697 [Periódico revisado por pares]

New York, NY: IEEE

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