Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Synthesis of hexagonal boron nitride: From bulk crystals to atomically thin filmsLopes, J. Marcelo J.Progress in crystal growth and characterization of materials, 2021-05, Vol.67 (2), p.100522, Article 100522 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Nonlinear optical responses of crystalline systems: Results from a velocity gauge analysisPassos, D. J. ; Ventura, G. B. ; Lopes, J. M. Viana Parente ; Santos, J. M. B. Lopes dos ; Peres, N. M. R.Physical review. B, 2018-06, Vol.97 (23), Article 235446 [Periódico revisado por pares]College Park: American Physical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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Observation of Van Hove singularities in twisted graphene layersAndrei, E. Y ; Li, Guohong ; Luican, A ; Lopes dos Santos, J. M. B ; Castro Neto, A. H ; Reina, A ; Kong, JNature physics, 2010-02, Vol.6 (2), p.109-113 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
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4 |
Material Type: Artigo
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Gauge covariances and nonlinear optical responsesVentura, G. B. ; Passos, D. J. ; Lopes dos Santos, J. M. B. ; Viana Parente Lopes, J. M. ; Peres, N. M. R.Physical review. B, 2017-07, Vol.96 (3), Article 035431 [Periódico revisado por pares]College Park: American Physical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxyNakhaie, S. ; Wofford, J. M. ; Schumann, T. ; Jahn, U. ; Ramsteiner, M. ; Hanke, M. ; Lopes, J. M. J. ; Riechert, H.Applied physics letters, 2015-05, Vol.106 (21) [Periódico revisado por pares]United StatesTexto completo disponível |
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6 |
Material Type: Artigo
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Molecular Beam Epitaxy of GaN Nanowires on Epitaxial GrapheneFernández-Garrido, Sergio ; Ramsteiner, Manfred ; Gao, Guanhui ; Galves, Lauren A ; Sharma, Bharat ; Corfdir, Pierre ; Calabrese, Gabriele ; de Souza Schiaber, Ziani ; Pfüller, Carsten ; Trampert, Achim ; Lopes, João Marcelo J ; Brandt, Oliver ; Geelhaar, LutzNano letters, 2017-09, Vol.17 (9), p.5213-5221 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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7 |
Material Type: Artigo
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Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)Copetti, Gabriela ; Nunes, Eduardo H ; Feijó, Taís O ; Galves, Lauren A ; Heilmann, Martin ; Soares, Gabriel V ; Lopes, J Marcelo J ; Radtke, CláudioNanotechnology, 2021-04, Vol.32 (14), p.145707-145707 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfacesSchumann, T. ; Friedland, K.-J. ; Oliveira, M. H. ; Tahraoui, A. ; Lopes, J. M. J. ; Riechert, H.Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235402 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Nanoscale friction on MoS2/graphene heterostructuresLiu, Zhao ; Szczefanowicz, Bartosz ; Lopes, J Marcelo J ; Gan, Ziyang ; Antony, George ; Turchanin, Andrey ; Bennewitz, RolandNanoscale, 2023-03, Vol.15 (12), p.5809-5815 [Periódico revisado por pares]Cambridge: Royal Society of ChemistryTexto completo disponível |
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10 |
Material Type: Artigo
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Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beamHeilmann, Martin ; Deinhart, Victor ; Tahraoui, Abbes ; Höflich, Katja ; Lopes, J. Marcelo J.NPJ 2D materials and applications, 2021-08, Vol.5 (1), p.1-7, Article 70 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |