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Refinado por: Base de dados/Biblioteca: METADEX remover Nome da Publicação: Microelectronic Engineering remover Materials Research Database remover
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Etching optimization of post aluminum-silicon thermomigration process residues
Etching optimization of post aluminum-silicon thermomigration process residues
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Etching optimization of post aluminum-silicon thermomigration process residues

Lu, Bin ; Gautier, Gaël ; Valente, Damien ; Morillon, Benjamin ; Alquier, Daniel

Microelectronic engineering, 2016-01, Vol.149, p.97-105 [Periódico revisado por pares]

Elsevier B.V

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2
Plasma etching of copper films at low temperature
Plasma etching of copper films at low temperature
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Plasma etching of copper films at low temperature

Tamirisa, P.A. ; Levitin, G. ; Kulkarni, N.S. ; Hess, D.W.

Microelectronic engineering, 2007, Vol.84 (1), p.105-108 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Fabrication of nano metallic holes for color filters based on a controllable self-assembly of polystyrene spheres
Fabrication of nano metallic holes for color filters based on a controllable self-assembly of polystyrene spheres
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Fabrication of nano metallic holes for color filters based on a controllable self-assembly of polystyrene spheres

Li, Shuhong ; Ren, Liangke ; Yang, Zheng ; Zhang, Zhiyou ; Gao, Fuhua ; Du, Jinglei ; Zhang, Sijie

Microelectronic engineering, 2014-01, Vol.113, p.143-146 [Periódico revisado por pares]

Elsevier B.V

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4
Fabrication and application of stainless steel stamps for the preparation of microfluidic devices
Fabrication and application of stainless steel stamps for the preparation of microfluidic devices
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Fabrication and application of stainless steel stamps for the preparation of microfluidic devices

Kotowski, Jaroslav ; Šnita, Dalimil

Microelectronic engineering, 2014-08, Vol.125, p.83-88 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
A study on the Pt electrode etching for 0.15 μm technologies
A study on the Pt electrode etching for 0.15 μm technologies
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A study on the Pt electrode etching for 0.15 μm technologies

Kim, Hyoun-Woo ; Ju, Byong-Sun ; Kang, Chang-Jin ; Moon, Joo-Tae

Microelectronic engineering, 2003-01, Vol.65 (1), p.185-195 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Microfluidic etching driven by capillary forces for rapid prototyping of gold structures
Microfluidic etching driven by capillary forces for rapid prototyping of gold structures
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Microfluidic etching driven by capillary forces for rapid prototyping of gold structures

Stark, R.W. ; Sakai Stalder, M. ; Stemmer, A.

Microelectronic engineering, 2003-06, Vol.67, p.229-236 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions
Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions
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Investigation of copper removal efficiency on reclaimed wafers with HF-based solutions

Abbadie, A. ; Favier, S. ; Giroud, C. ; Billon, T.

Microelectronic engineering, 2004-05, Vol.71 (3), p.310-320 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Process and equipment simulation of dry silicon etching in the absence of ion bombardment
Process and equipment simulation of dry silicon etching in the absence of ion bombardment
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Process and equipment simulation of dry silicon etching in the absence of ion bombardment

Otto, T. ; Wolf, H. ; Streiter, R. ; Dehoff, A. ; Wandel, K. ; Gessner, T.

Microelectronic engineering, 1999-08, Vol.45 (4), p.377-391 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Low-temperature dry etching of copper using a new chemical approach
Low-temperature dry etching of copper using a new chemical approach
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Low-temperature dry etching of copper using a new chemical approach

Kruck, Th ; Schober, M.

Microelectronic engineering, 1997-11, Vol.37, p.121-126 [Periódico revisado por pares]

Elsevier B.V

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10
Mechanism studies of Cu RIE for VLSI interconnections
Mechanism studies of Cu RIE for VLSI interconnections
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Mechanism studies of Cu RIE for VLSI interconnections

Markert, M. ; Bertz, A. ; Gessner, T.

Microelectronic engineering, 1997-11, Vol.37, p.127-133 [Periódico revisado por pares]

Elsevier B.V

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