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1 |
Material Type: Artigo
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Etching optimization of post aluminum-silicon thermomigration process residuesLu, Bin ; Gautier, Gaël ; Valente, Damien ; Morillon, Benjamin ; Alquier, DanielMicroelectronic engineering, 2016-01, Vol.149, p.97-105 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
2 |
Material Type: Artigo
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Plasma etching of copper films at low temperatureTamirisa, P.A. ; Levitin, G. ; Kulkarni, N.S. ; Hess, D.W.Microelectronic engineering, 2007, Vol.84 (1), p.105-108 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
3 |
Material Type: Artigo
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Fabrication of nano metallic holes for color filters based on a controllable self-assembly of polystyrene spheresLi, Shuhong ; Ren, Liangke ; Yang, Zheng ; Zhang, Zhiyou ; Gao, Fuhua ; Du, Jinglei ; Zhang, SijieMicroelectronic engineering, 2014-01, Vol.113, p.143-146 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
4 |
Material Type: Artigo
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Fabrication and application of stainless steel stamps for the preparation of microfluidic devicesKotowski, Jaroslav ; Šnita, DalimilMicroelectronic engineering, 2014-08, Vol.125, p.83-88 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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A study on the Pt electrode etching for 0.15 μm technologiesKim, Hyoun-Woo ; Ju, Byong-Sun ; Kang, Chang-Jin ; Moon, Joo-TaeMicroelectronic engineering, 2003-01, Vol.65 (1), p.185-195 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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Microfluidic etching driven by capillary forces for rapid prototyping of gold structuresStark, R.W. ; Sakai Stalder, M. ; Stemmer, A.Microelectronic engineering, 2003-06, Vol.67, p.229-236 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
7 |
Material Type: Artigo
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Process and equipment simulation of dry silicon etching in the absence of ion bombardmentOtto, T. ; Wolf, H. ; Streiter, R. ; Dehoff, A. ; Wandel, K. ; Gessner, T.Microelectronic engineering, 1999-08, Vol.45 (4), p.377-391 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
8 |
Material Type: Artigo
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Low-temperature dry etching of copper using a new chemical approachKruck, Th ; Schober, M.Microelectronic engineering, 1997-11, Vol.37, p.121-126 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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Mechanism studies of Cu RIE for VLSI interconnectionsMarkert, M. ; Bertz, A. ; Gessner, T.Microelectronic engineering, 1997-11, Vol.37, p.127-133 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
10 |
Material Type: Artigo
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Thermodynamic analysis of copper CVD using CuCl as precursorMadar, R. ; Bernard, C. ; Palleau, J. ; Torres, J.Microelectronic engineering, 1992, Vol.19 (1), p.571-574 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |