Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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A 76 GHz high performance subharmonic mixer MMIC using low 1/f noise diodes for automotive radarsKanaya, K. ; Aihara, Y. ; Katoh, T. ; Komaru, M. ; Matsuda, Y.IEEE Compound Semiconductor Integrated Circuit Symposium, 2004, 2004, p.260-263Piscataway NJ: IEEETexto completo disponível |
2 |
Material Type: Artigo
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Monte Carlo simulation of noise in GaAs semiconductor devicesAdams, J.G. ; Ting-Wei Tang ; Kay, L.E.IEEE transactions on electron devices, 1994-04, Vol.41 (4), p.575-581 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
3 |
Material Type: Ata de Congresso
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The development of planar Schottky diode waveguide mixers at submillimeter wavelengthsHesler, J.L. ; Crowe, T.W. ; Bishop, W.L. ; Weikle, R.M. ; Bradley, R.F. ; Shing-Kuo Pan1997 IEEE MTT-S International Microwave Symposium Digest, 1997, Vol.2, p.953-956 vol.2IEEETexto completo disponível |
4 |
Material Type: Artigo
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Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor JunctionsJelenski, A. ; Kollberg, E.L. ; Zirath, H.H.G.IEEE transactions on microwave theory and techniques, 1986-11, Vol.34 (11), p.1193-1201 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
5 |
Material Type: Ata de Congresso
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A 200 GHz planar diode subharmonically pumped waveguide mixer with state-of-the-art performanceSiegel, P.H. ; Dengler, R.J. ; Mehdi, I. ; Bishop, W.L. ; Crowe, T.W.1992 IEEE MTT-S Microwave Symposium Digest, 1992, p.595-598 vol.2IEEETexto completo disponível |
6 |
Material Type: Artigo
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Temperature-Variable Characteristics and Noise in Metal - Semiconductor JunctionsKollberg, E.L. ; Zirath, H. ; Jelenski, A.IEEE transactions on microwave theory and techniques, 1986-09, Vol.34 (9), p.913-922 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
7 |
Material Type: Ata de Congresso
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Noise and THz rectification characteristics of zero-bias quantum tunneling Sb-heterostructure diodesLuukanen, A. ; Grossman, E.N. ; Moyer, H.P. ; Schulman, J.N.Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004, 2004, p.40-45Singapore: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Noise Reduction in GaAs Schottky Barrier Mixer Diodes (Short Paper)Kattmann, K.M. ; Crowe, T.W. ; Mattauch, R.J.IEEE transactions on microwave theory and techniques, 1987-02, Vol.35 (2), p.212-214 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
9 |
Material Type: Artigo
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Noise characterization of Schottky barrier diodes for high-frequency mixing applicationsPalczewski, S. ; Jelenski, A. ; Gruub, A. ; Hartnagel, H.L.IEEE microwave and guided wave letters, 1992-11, Vol.2 (11), p.442-444IEEETexto completo disponível |
10 |
Material Type: Artigo
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Low frequency noise performance of 2-20 µm diameter Schottky barrier mixer diodesMonnig, K.A. ; Mattauch, R.J.Proceedings of the IEEE, 1977-07, Vol.65 (7), p.1073-1074 [Periódico revisado por pares]IEEETexto completo disponível |