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Stabilization of substitutional Mn in silicon-based semiconductors
Stabilization of substitutional Mn in silicon-based semiconductors
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Stabilization of substitutional Mn in silicon-based semiconductors

DA SILVA, Antonio J. R ; FAZZIO, A ; ANTONELLI, Alex

Physical review. B, Condensed matter and materials physics, 2004-11, Vol.70 (19), p.193205.1-193205.4, Article 193205

Ridge, NY: American Physical Society

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Theoretical studies of native defects in cubic boron nitride
Theoretical studies of native defects in cubic boron nitride
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Theoretical studies of native defects in cubic boron nitride

Piquini, P. ; Mota, R. ; Schmidt, T. M. ; Fazzio, A.

Physical review. B, Condensed matter, 1997-08, Vol.56 (7), p.3556-3559

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Defect complexes in GaAs: First-principles calculations
Defect complexes in GaAs: First-principles calculations
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Defect complexes in GaAs: First-principles calculations

Janotti, A. ; Fazzio, A. ; Piquini, P. ; Mota, R.

Physical review. B, Condensed matter, 1997-11, Vol.56 (20), p.13073-13076

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4
Role played by N and N-N impurities in type-IV semiconductors
Role played by N and N-N impurities in type-IV semiconductors
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Role played by N and N-N impurities in type-IV semiconductors

CUNHA, C ; CANUTO, S ; FAZZIO, A

Physical review. B, Condensed matter, 1993-12, Vol.48 (24), p.17806-17810

Woodbury, NY: American Physical Society

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5
Germanium negative-U center in GaAs
Germanium negative-U center in GaAs
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Germanium negative-U center in GaAs

Schmidt, TM ; Fazzio, A ; Caldas, MJ

Physical review. B, Condensed matter, 1996-01, Vol.53 (3), p.1315-1321

United States

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6
Electronic structure of copper, silver, and gold impurities in silicon
Electronic structure of copper, silver, and gold impurities in silicon
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Electronic structure of copper, silver, and gold impurities in silicon

FAZZIO, A ; CALDAS, M. J ; ZUNGER, A

Physical review. B, Condensed matter, 1985-07, Vol.32 (2), p.934-954

Woodbury, NY: American Physical Society

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7
Ab initio calculation of electronic properties of periodically Si- delta -doped GaAs
Ab initio calculation of electronic properties of periodically Si- delta -doped GaAs
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Ab initio calculation of electronic properties of periodically Si- delta -doped GaAs

Schmidt, TM ; Fazzio, A

Physical review. B, Condensed matter, 1995-03, Vol.51 (12), p.7898-7900

United States

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8
Many-electron treatment of the off-center substitutional O in Si
Many-electron treatment of the off-center substitutional O in Si
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Many-electron treatment of the off-center substitutional O in Si

CANUTO, S ; FAZZIO, A

Physical review. B, Condensed matter, 1986-03, Vol.33 (6), p.4432-4435

Woodbury, NY: American Physical Society

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9
Many-electron multiplet effects in the spectra of 3d impurities in heteropolar semiconductors
Many-electron multiplet effects in the spectra of 3d impurities in heteropolar semiconductors
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Many-electron multiplet effects in the spectra of 3d impurities in heteropolar semiconductors

FAZZIO, A ; CALDAS, M. J ; ZUNGER, A

Physical review. B, Condensed matter, 1984-01, Vol.30 (6), p.3430-3455

Woodbury, NY: American Physical Society

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10
Theoretical investigation of the electrical and optical activity of vanadium in GaAs
Theoretical investigation of the electrical and optical activity of vanadium in GaAs
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Theoretical investigation of the electrical and optical activity of vanadium in GaAs

CALDAS, M. J ; FIGUEIREDO, S. K ; FAZZIO, A

Physical review. B, Condensed matter, 1986-05, Vol.33 (10), p.7102-7109

Woodbury, NY: American Physical Society

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