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Electronic, structural, and transport properties of Ni-doped graphene nanoribbons
Electronic, structural, and transport properties of Ni-doped graphene nanoribbons
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Electronic, structural, and transport properties of Ni-doped graphene nanoribbons

Rigo, V. A. ; Martins, T. B. ; da Silva, Antonio J. R. ; Fazzio, A. ; Miwa, R. H.

Physical review. B, Condensed matter and materials physics, 2009-02, Vol.79 (7), Article 075435 [Periódico revisado por pares]

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2
Jacutingaite-family: A class of topological materials
Jacutingaite-family: A class of topological materials
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Jacutingaite-family: A class of topological materials

de Lima, F. Crasto ; Miwa, R. H. ; Fazzio, A.

Physical review. B, 2020-12, Vol.102 (23), p.1, Article 235153 [Periódico revisado por pares]

College Park: American Physical Society

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3
Valley Hall effect in silicene and hydrogenated silicene ruled by grain boundaries: An ab initio investigation
Valley Hall effect in silicene and hydrogenated silicene ruled by grain boundaries: An ab initio investigation
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Valley Hall effect in silicene and hydrogenated silicene ruled by grain boundaries: An ab initio investigation

Miwa, R. H. ; Kagimura, R. ; Lima, Matheus P. ; Fazzio, A.

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205442 [Periódico revisado por pares]

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4
Two-dimensional van der Waals p-n junction of InSe/phosphorene
Two-dimensional van der Waals p-n junction of InSe/phosphorene
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Two-dimensional van der Waals p-n junction of InSe/phosphorene

Padilha, J. E. ; Miwa, R. H. ; da Silva, Antonio J. R. ; Fazzio, A.

Physical review. B, 2017-05, Vol.95 (19), p.195143, Article 195143 [Periódico revisado por pares]

College Park: American Physical Society

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5
Topological phases in triangular lattices of Ru adsorbed on graphene: Ab initio calculations
Topological phases in triangular lattices of Ru adsorbed on graphene: Ab initio calculations
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Topological phases in triangular lattices of Ru adsorbed on graphene: Ab initio calculations

Acosta, C. Mera ; Lima, Matheus P. ; Miwa, R. H. ; da Silva, Antônio J. R. ; Fazzio, A.

Physical review. B, Condensed matter and materials physics, 2014-04, Vol.89 (15), Article 155438 [Periódico revisado por pares]

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6
Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone
Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone
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Tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brillouin zone

Acosta, Carlos Mera ; Lima, Matheus P. ; da Silva, Antônio J. R. ; Fazzio, A. ; Lewenkopf, C. H.

Physical review. B, 2018-07, Vol.98 (3), p.035106, Article 035106 [Periódico revisado por pares]

College Park: American Physical Society

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7
Interfaces between buckling phases in silicene: Ab initio density functional theory calculations
Interfaces between buckling phases in silicene: Ab initio density functional theory calculations
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Interfaces between buckling phases in silicene: Ab initio density functional theory calculations

Lima, Matheus P. ; Fazzio, A. ; da Silva, Antônio J. R.

Physical review. B, Condensed matter and materials physics, 2013-12, Vol.88 (23), Article 235413 [Periódico revisado por pares]

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8
Theoretical study of the formation, evolution, and breaking of gold nanowires
Theoretical study of the formation, evolution, and breaking of gold nanowires
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Theoretical study of the formation, evolution, and breaking of gold nanowires

da Silva, E. Z. ; Novaes, Frederico D. ; da Silva, Antônio J. R. ; Fazzio, A.

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (11), Article 115411 [Periódico revisado por pares]

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9
Fully and partially iodinated germanane as a platform for the observation of the quantum spin Hall effect
Fully and partially iodinated germanane as a platform for the observation of the quantum spin Hall effect
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Fully and partially iodinated germanane as a platform for the observation of the quantum spin Hall effect

Padilha, J. E. ; Abdalla, L. B. ; da Silva, A. J. R. ; Fazzio, A.

Physical review. B, 2016-01, Vol.93 (4), Article 045135 [Periódico revisado por pares]

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10
Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers
Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers
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Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers

Padilha, J. E. ; Janotti, A. ; Fazzio, A. ; da Silva, A. J. R.

Physical review. B, 2016-11, Vol.94 (19), Article 195424 [Periódico revisado por pares]

College Park: American Physical Society

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