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Refinado por: Nome da Publicação: Appl. Phys. Lett remover Nome da Publicação: Applied Physics Letters remover
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Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films
Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films
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Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films

Tan, Y. T. ; Kamiya, T. ; Durrani, Z. A. K. ; Ahmed, H.

Applied physics letters, 2001-02, Vol.78 (8), p.1083-1085 [Periódico revisado por pares]

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2
Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles
Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles
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Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles

Okabayashi, Norio ; Maeda, Kosuke ; Muraki, Taro ; Tanaka, Daisuke ; Sakamoto, Masanori ; Teranishi, Toshiharu ; Majima, Yutaka

Applied physics letters, 2012-01, Vol.100 (3), p.033101-033101-3 [Periódico revisado por pares]

American Institute of Physics

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3
Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures
Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures
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Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

Hiraoka, S. ; Horibe, K. ; Ishihara, R. ; Oda, S. ; Kodera, T.

Applied physics letters, 2020-08, Vol.117 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Hanyu, Yuichiro ; Domen, Kay ; Nomura, Kenji ; Hiramatsu, Hidenori ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, Toshio

Applied physics letters, 2013-11, Vol.103 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
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Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Helman, A. ; Tchernycheva, M. ; Lusson, A. ; Warde, E. ; Julien, F. H. ; Moumanis, Kh ; Fishman, G. ; Monroy, E. ; Daudin, B. ; Le Si Dang, D. ; Bellet-Amalric, E. ; Jalabert, D.

Applied physics letters, 2003-12, Vol.83 (25), p.5196-5198 [Periódico revisado por pares]

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6
Production of relativistic electrons by irradiation of 43-fs-laser pulses on copper film
Production of relativistic electrons by irradiation of 43-fs-laser pulses on copper film
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Production of relativistic electrons by irradiation of 43-fs-laser pulses on copper film

Oishi, Yuji ; Nayuki, Takuya ; Nemoto, Koshichi ; Okano, Yasuaki ; Hironaka, Yoichiro ; Nakamura, Kazutaka G. ; Kondo, Ken-ichi

Applied physics letters, 2001-08, Vol.79 (9), p.1234-1236 [Periódico revisado por pares]

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7
Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties
Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties
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Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties

Shiraishi, T. ; Choi, S. ; Kiguchi, T. ; Shimizu, T. ; Funakubo, H. ; Konno, T. J.

Applied physics letters, 2019-06, Vol.114 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Enhanced carrier transport by defect passivation in Si/SiO2 nanostructure-based solar cells
Enhanced carrier transport by defect passivation in Si/SiO2 nanostructure-based solar cells
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Enhanced carrier transport by defect passivation in Si/SiO2 nanostructure-based solar cells

Watanabe, Keiji ; Tsuchiya, Ryuta ; Mine, Toshiyuki ; Yonamoto, Yoshiki ; Akamatsu, Naotoshi ; Hatano, Mutsuko

Applied physics letters, 2012-10, Vol.101 (15) [Periódico revisado por pares]

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9
Temperature dependence of hole transport properties through physically defined silicon quantum dots
Temperature dependence of hole transport properties through physically defined silicon quantum dots
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Temperature dependence of hole transport properties through physically defined silicon quantum dots

Shimatani, N. ; Yamaoka, Y. ; Ishihara, R. ; Andreev, A. ; Williams, D. A. ; Oda, S. ; Kodera, T.

Applied physics letters, 2020-08, Vol.117 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Correlation of doping, structure, and carrier dynamics in a single GaN nanorod
Correlation of doping, structure, and carrier dynamics in a single GaN nanorod
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Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

Zhou, Xiang ; Lu, Ming-Yen ; Lu, Yu-Jung ; Gwo, Shangjr ; Gradečak, Silvija

Applied physics letters, 2013-06, Vol.102 (25) [Periódico revisado por pares]

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