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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Silicon remover
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1
Nitrogen in silicon for room temperature single-electron tunneling devices
Nitrogen in silicon for room temperature single-electron tunneling devices
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Nitrogen in silicon for room temperature single-electron tunneling devices

Yadav, Pooja ; Arora, Hemant ; Samanta, Arup

Applied physics letters, 2023-02, Vol.122 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Publisher's Note: “Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser” [Appl. Phys. Lett. 104 , 242102 (2014)]
Publisher's Note: “Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser” [Appl. Phys. Lett. 104 , 242102 (2014)]
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Publisher's Note: “Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser” [Appl. Phys. Lett. 104 , 242102 (2014)]

Yun, J. ; Varlamov, S. ; Huang, J. ; Kim, K. ; Green, M. A.

Applied physics letters, 2015-06, Vol.106 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser
Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser
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Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

Yun, J. ; Varlamov, S. ; Huang, J. ; Kim, K. ; Green, M. A.

Applied physics letters, 2014-06, Vol.104 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Tunable hybrid silicon single-electron transistor–nanoscale field-effect transistor operating at room temperature
Tunable hybrid silicon single-electron transistor–nanoscale field-effect transistor operating at room temperature
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Tunable hybrid silicon single-electron transistor–nanoscale field-effect transistor operating at room temperature

Abualnaja, Faris ; He, Wenkun ; Chu, Kai-Lin ; Andreev, Aleksey ; Jones, Mervyn ; Durrani, Zahid

Applied physics letters, 2023-06, Vol.122 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
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Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Samanta, Arup ; Muruganathan, Manoharan ; Hori, Masahiro ; Ono, Yukinori ; Mizuta, Hiroshi ; Tabe, Michiharu ; Moraru, Daniel

Applied physics letters, 2017-02, Vol.110 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides
Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides
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Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides

Wiemann, Yvonne ; Simmendinger, Julian ; Clauss, Conrad ; Bogani, Lapo ; Bothner, Daniel ; Koelle, Dieter ; Kleiner, Reinhold ; Dressel, Martin ; Scheffler, Marc

Applied physics letters, 2015-05, Vol.106 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
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High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

Betz, A. C. ; Barraud, S. ; Wilmart, Q. ; Plaçais, B. ; Jehl, X. ; Sanquer, M. ; Gonzalez-Zalba, M. F.

Applied physics letters, 2014-01, Vol.104 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels
Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels
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Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels

Sen, R. ; Vast, N. ; Sjakste, J.

Applied physics letters, 2022-02, Vol.120 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
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MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

Seryogin, George ; Alema, Fikadu ; Valente, Nicholas ; Fu, Houqiang ; Steinbrunner, Erich ; Neal, Adam T. ; Mou, Shin ; Fine, Aaron ; Osinsky, Andrei

Applied physics letters, 2020-12, Vol.117 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
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Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Rafique, Subrina ; Han, Lu ; Neal, Adam T. ; Mou, Shin ; Tadjer, Marko J. ; French, Roger H. ; Zhao, Hongping

Applied physics letters, 2016-09, Vol.109 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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