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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Gallium Nitrides remover Electrons remover
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1
High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature
High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature
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High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature

Buß, J. H. ; Schaefer, A. ; Schupp, T. ; As, D. J. ; Hägele, D. ; Rudolph, J.

Applied physics letters, 2014-11, Vol.105 (18), p.182404 [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
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Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Brazzini, Tommaso ; Casbon, Michael A. ; Sun, Huarui ; Uren, Michael J. ; Lees, Jonathan ; Tasker, Paul J. ; Jung, Helmut ; Blanck, Hervé ; Kuball, Martin

Applied physics letters, 2015-05, Vol.106 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride
Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride
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Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

Khurgin, Jacob B. ; Bajaj, Sanyam ; Rajan, Siddharth

Applied physics letters, 2015-12, Vol.107 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Optical study of hot electron transport in GaN:Signatures of the hot-phonon effect
Optical study of hot electron transport in GaN:Signatures of the hot-phonon effect
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Optical study of hot electron transport in GaN:Signatures of the hot-phonon effect

Wang, Kejia ; Simon, John ; Goel, Niti ; Jena, Debdeep

Applied physics letters, 2006-01, Vol.88 (2), p.022103-022103-3 [Periódico revisado por pares]

United States: American Institute of Physics

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5
Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN
Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN
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Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN

Lopatiuk-Tirpak, O. ; Chernyak, L. ; Wang, Y. L. ; Ren, F. ; Pearton, S. J. ; Gartsman, K.

Applied physics letters, 2007-08, Vol.91 (9), p.092107-092107-3 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Electrical properties of Si-doped GaN prepared using pulsed sputtering
Electrical properties of Si-doped GaN prepared using pulsed sputtering
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Electrical properties of Si-doped GaN prepared using pulsed sputtering

Arakawa, Yasuaki ; Ueno, Kohei ; Imabeppu, Hideyuki ; Kobayashi, Atsushi ; Ohta, Jitsuo ; Fujioka, Hiroshi

Applied physics letters, 2017-01, Vol.110 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing
Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing
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Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

Zhang, Jinhan ; Huang, Sen ; Bao, Qilong ; Wang, Xinhua ; Wei, Ke ; Zheng, Yingkui ; Li, Yankui ; Zhao, Chao ; Liu, Xinyu ; Zhou, Qi ; Chen, Wanjun ; Zhang, Bo

Applied physics letters, 2015-12, Vol.107 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
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Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

Xue, JunShuai ; Zhang, JinCheng ; Hao, Yue

Applied physics letters, 2015-07, Vol.107 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure
Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure
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Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure

Xiang, Yong ; Chen, Xinjuan ; Ji, Cheng ; Yang, Xuelin ; Xu, Fujun ; Yang, Zhijian ; Kang, Xiangning ; Shen, Bo ; Zhang, Guoyi ; Yu, Tongjun

Applied physics letters, 2016-02, Vol.108 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
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High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

Li, Guowang ; Cao, Yu ; Xing, Huili Grace ; Jena, Debdeep

Applied physics letters, 2010-11, Vol.97 (22), p.222110-222110-3 [Periódico revisado por pares]

United States: American Institute of Physics

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