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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Materials Science remover Condensed Matter Physics, Superconductivity And Superfluidity remover
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1
The evidence of cathodic micro-discharges during plasma electrolytic oxidation process
The evidence of cathodic micro-discharges during plasma electrolytic oxidation process
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The evidence of cathodic micro-discharges during plasma electrolytic oxidation process

Nominé, A. ; Martin, J. ; Noël, C. ; Henrion, G. ; Belmonte, T. ; Bardin, I. V. ; Kovalev, V. L. ; Rakoch, A. G.

Applied physics letters, 2014-02, Vol.104 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain
Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain
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Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain

Hwang, Choongyu ; Hwang, Jinwoong ; Lee, Ji-Eun ; Denlinger, Jonathan ; Mo, Sung-Kwan

Applied physics letters, 2017-12, Vol.111 (23) [Periódico revisado por pares]

United States: American Institute of Physics (AIP)

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3
Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature
Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature
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Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Fukuda, Yukio ; Otani, Yohei ; Okamoto, Hiroshi ; Iwasaki, Takuro ; Ono, Toshiro

Applied physics letters, 2011-09, Vol.99 (13) [Periódico revisado por pares]

United States

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4
Electron emission of Au nanoparticles embedded in ZnO for highly conductive oxide
Electron emission of Au nanoparticles embedded in ZnO for highly conductive oxide
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Electron emission of Au nanoparticles embedded in ZnO for highly conductive oxide

Huang, Po-Shun ; Hoe Kim, Dong ; Lee, Jung-Kun

Applied physics letters, 2014-04, Vol.104 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers
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High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

Li, Guowang ; Cao, Yu ; Xing, Huili Grace ; Jena, Debdeep

Applied physics letters, 2010-11, Vol.97 (22), p.222110-222110-3 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy
Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy
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Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy

Jenkins, Catherine ; Scholl, Andreas ; Kainuma, R. ; Elmers, Hans-Joachim ; Omori, Toshihiro

Applied physics letters, 2012-01, Vol.100 (3) [Periódico revisado por pares]

United States

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7
Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Chidambaram, Thenappan ; Veksler, Dmitry ; Madisetti, Shailesh ; Greene, Andrew ; Yakimov, Michael ; Tokranov, Vadim ; Hill, Richard ; Oktyabrsky, Serge

Applied physics letters, 2014-03, Vol.104 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures
Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures
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Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

Fan, Dongsheng ; Zeng, Zhaoquan ; Hu, Xian ; Dorogan, Vitaliy G. ; Li, Chen ; Benamara, Mourad ; Hawkridge, Michael E. ; Mazur, Yuriy I. ; Yu, Shui-Qing ; Johnson, Shane R. ; Wang, Zhiming M. ; Salamo, Gregory J.

Applied physics letters, 2012-10, Vol.101 (18) [Periódico revisado por pares]

United States

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9
Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures
Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures
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Extreme low-temperature molecular beam epitaxy of ZnO-based quantum structures

Blumstengel, S. ; Sadofev, S. ; Kirmse, H. ; Henneberger, F.

Applied physics letters, 2011-01, Vol.98 (3), p.31907 [Periódico revisado por pares]

United States

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10
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
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Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

Albert, S. ; Bengoechea-Encabo, A. ; Lefebvre, P. ; Sanchez-Garcia, M. A. ; Calleja, E. ; Jahn, U. ; Trampert, A.

Applied physics letters, 2011-09, Vol.99 (13), p.131108-131108-3 [Periódico revisado por pares]

United States: American Institute of Physics

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