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Refinado por: data de publicação: Após 2007 remover tipo de recurso: Imagens remover
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1
Scaling Of The Electron Temperature On The Expansion Ratio With Plasma Heating By Neutral Beams Only (Diamonds) And With Both Neutral Beams And Ecrh (Square)
Scaling Of The Electron Temperature On The Expansion Ratio With Plasma Heating By Neutral Beams Only (Diamonds) And With Both Neutral Beams And Ecrh (Square)
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Scaling Of The Electron Temperature On The Expansion Ratio With Plasma Heating By Neutral Beams Only (Diamonds) And With Both Neutral Beams And Ecrh (Square)

Soldatkina, Elena

Zenodo 2016

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2
Abundances of (a) W44 + and (b) W45 + as a function of electron temperature calculated with different numbers of groups of levels
Abundances of (a) W44 + and (b) W45 + as a function of electron temperature calculated with different numbers of groups of levels
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Abundances of (a) W44 + and (b) W45 + as a function of electron temperature calculated with different numbers of groups of levels

A Sasaki ; I Murakami

IOP Publishing 2014

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3
Relative intensities (relative photon count rate) of several (n + Δn → n) transitions in H I on the assumption that the upper level populations are in Saha–Boltzmann equilibrium at the given electron temperature, here treated as equal to the kinetic temperature of the atoms
Relative intensities (relative photon count rate) of several (n + Δn → n) transitions in H I on the assumption that the upper level populations are in Saha–Boltzmann equilibrium at the given electron temperature, here treated as equal to the kinetic temperature of the atoms
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Relative intensities (relative photon count rate) of several (n + Δn → n) transitions in H I on the assumption that the upper level populations are in Saha–Boltzmann equilibrium at the given electron temperature, here treated as equal to the kinetic temperature of the atoms

J D Hey

IOP Publishing 2014

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4
Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition
Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition
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Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition

Chiatti, O ; Warburton, PA

2010

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5
Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition
Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition
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Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition

Chiatti, O ; Warburton, PA

2010

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6
Influence of the pulse length and temperature swing on the relative lifetime estimation for sintered/soldered chip-on-substrate samples. Numerical investigation: Poster presented at ESREF 2018, 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Aalborg, Denmark, October 1-5, 2018
Influence of the pulse length and temperature swing on the relative lifetime estimation for sintered/soldered chip-on-substrate samples. Numerical investigation: Poster presented at ESREF 2018, 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Aalborg, Denmark, October 1-5, 2018
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Influence of the pulse length and temperature swing on the relative lifetime estimation for sintered/soldered chip-on-substrate samples. Numerical investigation: Poster presented at ESREF 2018, 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Aalborg, Denmark, October 1-5, 2018

Simon, Flaviu-Bogdan

2018

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7
(a), (b) Typical recordings of the 310–335 nm region taken at the delay of 170 ns with 16 identified Cu I spectral lines [23]
(a), (b) Typical recordings of the 310–335 nm region taken at the delay of 170 ns with 16 identified Cu I spectral lines [23]
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(a), (b) Typical recordings of the 310–335 nm region taken at the delay of 170 ns with 16 identified Cu I spectral lines [23]

M Skočić ; M Burger ; Z Nikolić ; S Bukvić ; S Djeniže

IOP Publishing 2014

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8
Schematic of the sample chamber used in the experimental setup
Schematic of the sample chamber used in the experimental setup
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Schematic of the sample chamber used in the experimental setup

M Skočić ; M Burger ; Z Nikolić ; S Bukvić ; S Djeniže

IOP Publishing 2014

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9
(a)–(c) Typical spectral lines in the UV region recorded 120 ns after the laser shot, with 34 identified Cu II and three Cu I spectral lines [23, 24]
(a)–(c) Typical spectral lines in the UV region recorded 120 ns after the laser shot, with 34 identified Cu II and three Cu I spectral lines [23, 24]
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(a)–(c) Typical spectral lines in the UV region recorded 120 ns after the laser shot, with 34 identified Cu II and three Cu I spectral lines [23, 24]

M Skočić ; M Burger ; Z Nikolić ; S Bukvić ; S Djeniže

IOP Publishing 2014

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10
Experimental profiles of the 240.01 nm (4s–4p transition) and 240.33 nm (4p–5s transition) Cu II spectral lines fitted to the Voigt profile, convolution of the Lorentz and Gauss function, using a value of 4.4 pm as the Gaussian parameter
Experimental profiles of the 240.01 nm (4s–4p transition) and 240.33 nm (4p–5s transition) Cu II spectral lines fitted to the Voigt profile, convolution of the Lorentz and Gauss function, using a value of 4.4 pm as the Gaussian parameter
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Experimental profiles of the 240.01 nm (4s–4p transition) and 240.33 nm (4p–5s transition) Cu II spectral lines fitted to the Voigt profile, convolution of the Lorentz and Gauss function, using a value of 4.4 pm as the Gaussian parameter

M Skočić ; M Burger ; Z Nikolić ; S Bukvić ; S Djeniže

IOP Publishing 2014

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