Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
Observation of random telegraph signals : Anomalous nature of defects at the Si/SiO2 interfaceOHATA, A ; TORIUMI, A ; IWASE, M ; NATORI, KJournal of applied physics, 1990-07, Vol.68 (1), p.200-204 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
|
![]() |
Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO sub(2) interfaceOhata, A ; Toriumi, A ; Iwase, M ; Natori, KJournal of applied physics, 1990-01, Vol.68 (1), p.200-204 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
|
![]() |
Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junctionNatori, KenjiJournal of applied physics, 2015-02, Vol.117 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
|
![]() |
Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistorsNatori, Kenji ; Iwai, Hiroshi ; Kakushima, KuniyukiJournal of applied physics, 2015-12, Vol.118 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
|
![]() |
Dielectric properties of hydrogen-terminated Si(111) ultrathin filmsNakamura, Jun ; Ishihara, Shunsuke ; Natori, Akiko ; Shimizu, Tomo ; Natori, KenjiJournal of applied physics, 2006-03, Vol.99 (5), p.054309-054309-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
|
![]() |
Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistorNatori, Kenji ; Kimura, Yoji ; Shimizu, TomoJournal of applied physics, 2005-02, Vol.97 (3), p.034306-034306-7 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
|
![]() |
Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistorsLee, Yeonghun ; Kakushima, Kuniyuki ; Natori, Kenji ; Iwai, HiroshiJournal of applied physics, 2015-10, Vol.118 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
|
![]() |
Ballistic metal-oxide-semiconductor field effect transistorNatori, KenjiJournal of applied physics, 1994-10, Vol.76 (8), p.4879-4890 [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
|
![]() |
Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysisLee, Yeonghun ; Kakushima, Kuniyuki ; Natori, Kenji ; Iwai, HiroshiJournal of applied physics, 2011-06, Vol.109 (11), p.113712-113712-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
|
![]() |
Size-dependent properties of ballistic silicon nanowire field effect transistorsLee, Yeonghun ; Kakushima, Kuniyuki ; Shiraishi, Kenji ; Natori, Kenji ; Iwai, HiroshiJournal of applied physics, 2010-06, Vol.107 (11), p.113705-113705-7 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |