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Observation of random telegraph signals : Anomalous nature of defects at the Si/SiO2 interface
Observation of random telegraph signals : Anomalous nature of defects at the Si/SiO2 interface
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Observation of random telegraph signals : Anomalous nature of defects at the Si/SiO2 interface

OHATA, A ; TORIUMI, A ; IWASE, M ; NATORI, K

Journal of applied physics, 1990-07, Vol.68 (1), p.200-204 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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2
Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO sub(2) interface
Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO sub(2) interface
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Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO sub(2) interface

Ohata, A ; Toriumi, A ; Iwase, M ; Natori, K

Journal of applied physics, 1990-01, Vol.68 (1), p.200-204 [Periódico revisado por pares]

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3
Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction
Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction
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Superlinear generation of exciton and related paramagnetism induced by forward current in a diamond p-i-n junction

Natori, Kenji

Journal of applied physics, 2015-02, Vol.117 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors
Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors
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Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors

Natori, Kenji ; Iwai, Hiroshi ; Kakushima, Kuniyuki

Journal of applied physics, 2015-12, Vol.118 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Dielectric properties of hydrogen-terminated Si(111) ultrathin films
Dielectric properties of hydrogen-terminated Si(111) ultrathin films
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Dielectric properties of hydrogen-terminated Si(111) ultrathin films

Nakamura, Jun ; Ishihara, Shunsuke ; Natori, Akiko ; Shimizu, Tomo ; Natori, Kenji

Journal of applied physics, 2006-03, Vol.99 (5), p.054309-054309-5 [Periódico revisado por pares]

American Institute of Physics

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6
Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
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Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor

Natori, Kenji ; Kimura, Yoji ; Shimizu, Tomo

Journal of applied physics, 2005-02, Vol.97 (3), p.034306-034306-7 [Periódico revisado por pares]

American Institute of Physics

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7
Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors
Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors
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Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Lee, Yeonghun ; Kakushima, Kuniyuki ; Natori, Kenji ; Iwai, Hiroshi

Journal of applied physics, 2015-10, Vol.118 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Ballistic metal-oxide-semiconductor field effect transistor
Ballistic metal-oxide-semiconductor field effect transistor
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Ballistic metal-oxide-semiconductor field effect transistor

Natori, Kenji

Journal of applied physics, 1994-10, Vol.76 (8), p.4879-4890 [Periódico revisado por pares]

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9
Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis
Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis
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Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Lee, Yeonghun ; Kakushima, Kuniyuki ; Natori, Kenji ; Iwai, Hiroshi

Journal of applied physics, 2011-06, Vol.109 (11), p.113712-113712-5 [Periódico revisado por pares]

American Institute of Physics

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10
Size-dependent properties of ballistic silicon nanowire field effect transistors
Size-dependent properties of ballistic silicon nanowire field effect transistors
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Size-dependent properties of ballistic silicon nanowire field effect transistors

Lee, Yeonghun ; Kakushima, Kuniyuki ; Shiraishi, Kenji ; Natori, Kenji ; Iwai, Hiroshi

Journal of applied physics, 2010-06, Vol.107 (11), p.113705-113705-7 [Periódico revisado por pares]

American Institute of Physics

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