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Refinado por: Nome da Publicação: J. Appl. Phys remover assunto: Thin Films remover Journal Of Applied Physics remover
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Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
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Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

Yasuoka, Shinnosuke ; Shimizu, Takao ; Tateyama, Akinori ; Uehara, Masato ; Yamada, Hiroshi ; Akiyama, Morito ; Hiranaga, Yoshiomi ; Cho, Yasuo ; Funakubo, Hiroshi

Journal of applied physics, 2020-09, Vol.128 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Stabilizing the ferroelectric phase in doped hafnium oxide
Stabilizing the ferroelectric phase in doped hafnium oxide
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Stabilizing the ferroelectric phase in doped hafnium oxide

Hoffmann, M. ; Schroeder, U. ; Schenk, T. ; Shimizu, T. ; Funakubo, H. ; Sakata, O. ; Pohl, D. ; Drescher, M. ; Adelmann, C. ; Materlik, R. ; Kersch, A. ; Mikolajick, T.

Journal of applied physics, 2015-08, Vol.118 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Domain structures induced by tensile thermal strain in epitaxial PbTiO3 films on silicon substrates
Domain structures induced by tensile thermal strain in epitaxial PbTiO3 films on silicon substrates
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Domain structures induced by tensile thermal strain in epitaxial PbTiO3 films on silicon substrates

Sato, Tomoya ; Kodera, Masanori ; Ichinose, Daichi ; Mimura, Takanori ; Shimizu, Takao ; Yamada, Tomoaki ; Funakubo, Hiroshi

Journal of applied physics, 2022-01, Vol.131 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films
Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films
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Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

Katayama, Kiliha ; Shimizu, Takao ; Sakata, Osami ; Shiraishi, Takahisa ; Nakamura, Shogo ; Kiguchi, Takanori ; Akama, Akihiro ; Konno, Toyohiko J. ; Uchida, Hiroshi ; Funakubo, Hiroshi

Journal of applied physics, 2016-04, Vol.119 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Local C–V mapping for ferroelectrics using scanning nonlinear dielectric microscopy
Local C–V mapping for ferroelectrics using scanning nonlinear dielectric microscopy
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Local C–V mapping for ferroelectrics using scanning nonlinear dielectric microscopy

Hiranaga, Yoshiomi ; Mimura, Takanori ; Shimizu, Takao ; Funakubo, Hiroshi ; Cho, Yasuo

Journal of applied physics, 2020-12, Vol.128 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks
Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks
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Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks

Sakai, Joe ; Bavencoffe, Maxime ; Negulescu, Beatrice ; Limelette, Patrice ; Wolfman, Jérôme ; Tateyama, Akinori ; Funakubo, Hiroshi

Journal of applied physics, 2019-03, Vol.125 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Microscopic infrared thermography for fast estimation of the thermal properties of thin films
Microscopic infrared thermography for fast estimation of the thermal properties of thin films
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Microscopic infrared thermography for fast estimation of the thermal properties of thin films

Godin, A. ; Palomo del Barrio, E. ; Morikawa, J. ; Duquesne, M.

Journal of applied physics, 2018-08, Vol.124 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
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Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

Ohmori, Hideto ; Hatori, Tomoya ; Nakagawa, Shigeki

Journal of applied physics, 2008-04, Vol.103 (7), p.07A911-07A911-3 [Periódico revisado por pares]

United States: American Institute of Physics

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9
Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films
Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films
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Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

Tang, Haochun ; Ishikawa, Kyohei ; Ide, Keisuke ; Hiramatsu, Hidenori ; Ueda, Shigenori ; Ohashi, Naoki ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, Toshio

Journal of applied physics, 2015-11, Vol.118 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing
Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing
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Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

Akushichi, T. ; Takamura, Y. ; Shuto, Y. ; Sugahara, S.

Journal of applied physics, 2015-05, Vol.117 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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