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1
First principles studies of point defects and impurities in cubic boron nitride
First principles studies of point defects and impurities in cubic boron nitride
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

First principles studies of point defects and impurities in cubic boron nitride

J L P Castineira J. R Leite (José Roberto); L M R Scolfaro; R Enderlein; J L A Alves; H W Leite Alves; International Conference on Low Dimensional Structures and Devices (2. 1997 Lisbon)

Materials Science & Engineering B Lausanne v. 51, n. 1-3, p. 53-57, 1998

Lausanne Elsevier Sequoia 1998

Item não circula. Consulte sua biblioteca.(Acessar)

2
Hole band structure of p-type delta-doping quantum wells in silicon
Hole band structure of p-type delta-doping quantum wells in silicon
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Hole band structure of p-type delta-doping quantum wells in silicon

A L Rosa L M R Scolfaro; Guilherme Matos Sipahi; R Enderlein; J. R Leite (José Roberto); International Conference on Low Dimensional Structures and Devices (2. 1997 Lisbon, Portugal)

Microelectronic Engineering Amsterdam v. 43-44, p. 489-496, 1998

Amsterdam Elsevier Science 1998

Item não circula. Consulte sua biblioteca.(Acessar)

3
Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces
Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces
Material Type:
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Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces

Euclydes Marega Júnior A L Libardi; D I Lubyshev; Pedro Pablo González-Borrero; Pierre Basmaji; International Conference on Low Dimensional Structures and Devices (2. 1997 Lisboa)

Lisboa, 1997

Lisboa 1997

Localização: IFSC - Inst. Física de São Carlos    (PROD005025-SC ) e outros locais(Acessar)

4
Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'

R Enderlein Guilherme Matos Sipahi; L M R Scolfaro; J. R Leite (José Roberto); I E L Dias; International Conference on Low Dimensional Structures and Devices (1. 1995 Cingapura)

Materials Science and Engineering B 35 Cingapura : Elsevier, 1996

Cingapura Elsevier 1996

Item não circula. Consulte sua biblioteca.(Acessar)

5
Photoreflectance investigations of semiconductor device structutres
Photoreflectance investigations of semiconductor device structutres
Material Type:
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Photoreflectance investigations of semiconductor device structutres

J A N T Soares D Beliaev; R Enderlein; L M R Scolfaro; J. R Leite (José Roberto); International Conference on Low Dimensional Structures and Devices (1. 1995 Cingapura)

Cingapura v.35, p.267-72, 1995 Materials Science and Engeneering B

Cingapura 1995

Item não circula. Consulte sua biblioteca.(Acessar)

6
Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction
Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction

J. R. Leite (José Roberto) S C P Rodrigues; L M R Scolfaro; R Enderlein; D Beliaev; A. A Quivy (Alain André); International Conference on Low Dimensional Structures and Devices (1. 1995 Cingapura)

Cingapura v.35, p.250-5, 1995 Materials Science and Engeneering B

Cingapura 1995

Item não circula. Consulte sua biblioteca.(Acessar)

7
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells

A Tabata A M Ceschin; A. A Quivy (Alain André); A Levine; J. R Leite (José Roberto); R Enderlein; J. B. B Oliveira; E Laureto; J L Goncalves; International Conference on Low Dimensional Structures and Devices (1. 1995 Cingapura)

Cingapura v.35, p.401-5, 1995 Materials Science and Engineering B

Cingapura 1995

Item não circula. Consulte sua biblioteca.(Acessar)

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