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Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces
Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces
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Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

Schumann, T. ; Friedland, K.-J. ; Oliveira, M. H. ; Tahraoui, A. ; Lopes, J. M. J. ; Riechert, H.

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235402 [Periódico revisado por pares]

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2
Accuracy of generalized gradient approximation functionals for density-functional perturbation theory calculations
Accuracy of generalized gradient approximation functionals for density-functional perturbation theory calculations
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Accuracy of generalized gradient approximation functionals for density-functional perturbation theory calculations

He, Lianhua ; Liu, Fang ; Hautier, Geoffroy ; Oliveira, Micael J. T. ; Marques, Miguel A. L. ; Vila, Fernando D. ; Rehr, J. J. ; Rignanese, G.-M. ; Zhou, Aihui

Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (6), Article 064305 [Periódico revisado por pares]

American Physical Society

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3
Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
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Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

Schumann, T ; Dubslaff, M ; Oliveira, M H ; Hanke, M ; Lopes, J M J ; Riechert, H

Physical review. B, Condensed matter and materials physics, 2014-07, Vol.90 (4), Article 041403

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4
Ground-state properties of the spin-1/2 antiferromagnetic Heisenberg model on a square lattice by a Monte Carlo method
Ground-state properties of the spin-1/2 antiferromagnetic Heisenberg model on a square lattice by a Monte Carlo method
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Ground-state properties of the spin-1/2 antiferromagnetic Heisenberg model on a square lattice by a Monte Carlo method

Sauerwein, RA ; de Oliveira MJ

Physical review. B, Condensed matter, 1994-03, Vol.49 (9), p.5983-5987 [Periódico revisado por pares]

United States

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5
First- and second-neighbor square-lattice Potts model: renormalization-group treatment
First- and second-neighbor square-lattice Potts model: renormalization-group treatment
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First- and second-neighbor square-lattice Potts model: renormalization-group treatment

OLIVEIRA, P. M ; TSALLIS, C ; SCHWACHHEIM, G

Physical review. B, Condensed matter, 1984-03, Vol.29 (5), p.2755-2760

Woodbury, NY: American Physical Society

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6
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot
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Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot

Seridonio, A. C. ; Yoshida, M. ; Oliveira, L. N.

Physical review. B, Condensed matter and materials physics, 2009-12, Vol.80 (23), Article 235318

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7
Entanglement and Bell’s inequality violation above room temperature in metal carboxylates
Entanglement and Bell’s inequality violation above room temperature in metal carboxylates
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Entanglement and Bell’s inequality violation above room temperature in metal carboxylates

Souza, A. M. ; Soares-Pinto, D. O. ; Sarthour, R. S. ; Oliveira, I. S. ; Reis, M. S. ; Brandão, P. ; dos Santos, A. M.

Physical review. B, Condensed matter and materials physics, 2009-02, Vol.79 (5), Article 054408

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8
Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)
Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)
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Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)

González, J. C. ; Miquita, D. R. ; da Silva, M. I. N. ; Magalhães-Paniago, R. ; Moreira, M. V. B. ; de Oliveira, A. G.

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (11), Article 113403

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9
Renormalization-group calculation of excitation properties for impurity models
Renormalization-group calculation of excitation properties for impurity models
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Renormalization-group calculation of excitation properties for impurity models

YOSHIDA, M ; WHITAKER, M. A ; OLIVEIRA, L. N

Physical review. B, Condensed matter, 1990-05, Vol.41 (13B), p.9403-9414

Woodbury, NY: American Physical Society

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10
Subpicosecond study of carrier trapping dynamics in wide-band-gap crystals
Subpicosecond study of carrier trapping dynamics in wide-band-gap crystals
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Subpicosecond study of carrier trapping dynamics in wide-band-gap crystals

Martin, P. ; Guizard, S. ; Daguzan, Ph ; Petite, G. ; D'Oliveira, P. ; Meynadier, P. ; Perdrix, M.

Physical review. B, Condensed matter, 1997-03, Vol.55 (9), p.5799-5810

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