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Electrical charge state identification and control for the silicon vacancy in 4H-SiCBathen, M. E. ; Galeckas, A. ; Müting, J. ; Ayedh, H. M. ; Grossner, U. ; Coutinho, J. ; Frodason, Y. K. ; Vines, L.npj quantum information, 2019-12, Vol.5 (1), p.1-9, Article 111 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |