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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Visconti, P. ; Jones, K. M. ; Reshchikov, M. A. ; Cingolani, R. ; Morkoç, H. ; Molnar, R. J.

Applied physics letters, 2000-11, Vol.77 (22), p.3532-3534 [Peer Reviewed Journal]

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2
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
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Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Huang, D. ; Visconti, P. ; Jones, K. M. ; Reshchikov, M. A. ; Yun, F. ; Baski, A. A. ; King, T. ; Morkoç, H.

Applied physics letters, 2001-06, Vol.78 (26), p.4145-4147 [Peer Reviewed Journal]

United States: The American Physical Society

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3
Electronic rectification in protein devices
Electronic rectification in protein devices
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Electronic rectification in protein devices

Rinaldi, R. ; Biasco, A. ; Maruccio, G. ; Arima, V. ; Visconti, P. ; Cingolani, R. ; Facci, P. ; De Rienzo, F. ; Di Felice, R. ; Molinari, E. ; Ph. Verbeet, M. ; Canters, G. W.

Applied physics letters, 2003-01, Vol.82 (3), p.472-474 [Peer Reviewed Journal]

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4
Ionizing radiation effects on floating gates
Ionizing radiation effects on floating gates
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Ionizing radiation effects on floating gates

Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M.

Applied physics letters, 2004-07, Vol.85 (3), p.485-487 [Peer Reviewed Journal]

United States

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5
Characterization of free-standing hydride vapor phase epitaxy GaN
Characterization of free-standing hydride vapor phase epitaxy GaN
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Characterization of free-standing hydride vapor phase epitaxy GaN

Jasinski, J. ; Swider, W. ; Liliental-Weber, Z. ; Visconti, P. ; Jones, K. M. ; Reshchikov, M. A. ; Yun, F. ; Morkoç, H. ; Park, S. S. ; Lee, K. Y.

Applied physics letters, 2001-04, Vol.78 (16), p.2297-2299 [Peer Reviewed Journal]

United States

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6
Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy
Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy
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Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy

Reshchikov, M. A. ; Visconti, P. ; Morkoç, H.

Applied physics letters, 2001-01, Vol.78 (2), p.177-179 [Peer Reviewed Journal]

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7
Investigation of inversion domains in GaN by electric-force microscopy
Investigation of inversion domains in GaN by electric-force microscopy
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Investigation of inversion domains in GaN by electric-force microscopy

Jones, K. M. ; Visconti, P. ; Yun, F. ; Baski, A. A. ; Morkoç, H.

Applied physics letters, 2001-04, Vol.78 (17), p.2497-2499 [Peer Reviewed Journal]

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8
Subattoampere current induced by single ions in silicon oxide layersof nonvolatile memory cells
Subattoampere current induced by single ions in silicon oxide layersof nonvolatile memory cells
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Subattoampere current induced by single ions in silicon oxide layersof nonvolatile memory cells

Cellere, G. ; Paccagnella, A. ; Larcher, L. ; Visconti, A. ; Bonanomi, M.

Applied physics letters, 2006-05, Vol.88 (19), p.192909-192909-3 [Peer Reviewed Journal]

American Institute of Physics

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9
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
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Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration

Visconti, P. ; Jones, K. M. ; Reshchikov, M. A. ; Yun, F. ; Cingolani, R. ; Morkoç, H. ; Park, S. S. ; Lee, K. Y.

Applied physics letters, 2000-12, Vol.77 (23), p.3743-3745 [Peer Reviewed Journal]

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10
Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
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Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

Cellere, G. ; Paccagnella, A. ; Larcher, L. ; Visconti, A. ; Bonanomi, M.

Applied physics letters, 2006-05, Vol.88 (19) [Peer Reviewed Journal]

United States

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