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Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells
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Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

Bagatin, M ; Gerardin, S ; Paccagnella, A ; Visconti, A

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.969-974 [Peer Reviewed Journal]

New York: IEEE

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2
TID Sensitivity of NAND Flash Memory Building Blocks
TID Sensitivity of NAND Flash Memory Building Blocks
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TID Sensitivity of NAND Flash Memory Building Blocks

Bagatin, M. ; Cellere, G. ; Gerardin, S. ; Paccagnella, A. ; Visconti, A. ; Beltrami, S.

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.1909-1913 [Peer Reviewed Journal]

New York: IEEE

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3
Error Instability in Floating Gate Flash Memories Exposed to TID
Error Instability in Floating Gate Flash Memories Exposed to TID
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Error Instability in Floating Gate Flash Memories Exposed to TID

Bagatin, M. ; Gerardin, S. ; Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Beltrami, S.

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3267-3273 [Peer Reviewed Journal]

New York: IEEE

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4
Upsets in Erased Floating Gate Cells With High-Energy Protons
Upsets in Erased Floating Gate Cells With High-Energy Protons
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Upsets in Erased Floating Gate Cells With High-Energy Protons

Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Calabrese, M. ; Chiavarone, L. ; Ferlet-Cavrois, V. ; Schwank, J. R. ; Shaneyfelt, M. R. ; Dodds, N. ; Trinczek, M. ; Blackmore, E.

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.421-426 [Peer Reviewed Journal]

New York: IEEE

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5
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories
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Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories

Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Beltrami, S.

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2621-2627 [Peer Reviewed Journal]

New York: IEEE

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6
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
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Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

Bagatin, M. ; Gerardin, S. ; Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Beltrami, S. ; Harboe-Sorensen, R. ; Virtanen, A.

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3302-3308 [Peer Reviewed Journal]

New York: IEEE

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7
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories
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Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories

Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Ferlet-Cavrois, V. ; Visconti, A. ; Frost, C. D.

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1799-1805 [Peer Reviewed Journal]

New York: IEEE

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8
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells
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Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

Bagatin, M. ; Gerardin, S. ; Paccagnella, A. ; Visconti, A. ; Beltrami, S. ; Bertuccio, M. ; Czeppel, L. T.

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2824-2829 [Peer Reviewed Journal]

New York: IEEE

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9
Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle
Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle
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Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle

Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Beltrami, S. ; Ferlet-Cavrois, V.

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3491-3496 [Peer Reviewed Journal]

New York: IEEE

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10
Radiation induced leakage current in floating gate memory cells
Radiation induced leakage current in floating gate memory cells
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Radiation induced leakage current in floating gate memory cells

Cellere, G. ; Larcher, L. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M.

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2144-2152 [Peer Reviewed Journal]

New York: IEEE

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