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1
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems
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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems

J R L Fernandez C Moyses Araujo; A Ferreira da Silva; J. R Leite (José Roberto); Bo E Sernelius; A Tabata; E Abramog; V A Chitta; C Persson; R Ahuja; I Pepe; D J As; T Frey; D Schikora; K Lischka

Journal of Crystal Growth Amsterdam v. 231, n. 3, p. 420-427, 2001

Amsterdam 2001

Acesso online

2
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems

J R L Fernandez C Moyses Araujo; A Ferreira da Silva; J. R Leite (José Roberto); Bo E Sernelius; A Tabata; E Abramog; V A Chitta; C Persson; R Ahuja; I Pepe; D J As; T Frey; D Schikora; K Lischka

Journal of Crystal Growth Amsterdam v. 231, n. 3, p. 420-427, 2001

Amsterdam 2001

Acesso online

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Deste Autor:

  1. Schikora, D
  2. Persson, C
  3. Frey, T
  4. Ahuja, R
  5. Sernelius, B

Neste Assunto:

  1. Materiais (Análise;Testes)
  2. Dielétricos
  3. Resistência Dos Materiais

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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