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11 |
Material Type: Artículo
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substratesHigashiwaki, Masataka ; Sasaki, Kohei ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2012-01, Vol.100 (1) [Revista revisada por pares]Texto completo disponible |
12 |
Material Type: Artículo
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Ferroelectricity in hafnium oxide thin filmsBöscke, T. S. ; Müller, J. ; Bräuhaus, D. ; Schröder, U. ; Böttger, U.Applied physics letters, 2011-09, Vol.99 (10), p.102903-102903-3 [Revista revisada por pares]American Institute of PhysicsTexto completo disponible |
13 |
Material Type: Artículo
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An optically pumped 2.5 μm GeSn laser on Si operating at 110 KAl-Kabi, Sattar ; Ghetmiri, Seyed Amir ; Margetis, Joe ; Pham, Thach ; Zhou, Yiyin ; Dou, Wei ; Collier, Bria ; Quinde, Randy ; Du, Wei ; Mosleh, Aboozar ; Liu, Jifeng ; Sun, Greg ; Soref, Richard A. ; Tolle, John ; Li, Baohua ; Mortazavi, Mansour ; Naseem, Hameed A. ; Yu, Shui-QingApplied physics letters, 2016-10, Vol.109 (17) [Revista revisada por pares]Texto completo disponible |
14 |
Material Type: Artículo
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Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperatureHyuk Park, Min ; Joon Kim, Han ; Jin Kim, Yu ; Lee, Woongkyu ; Moon, Taehwan ; Seong Hwang, CheolApplied physics letters, 2013-06, Vol.102 (24) [Revista revisada por pares]Texto completo disponible |
15 |
Material Type: Artículo
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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrateUsami, Shigeyoshi ; Ando, Yuto ; Tanaka, Atsushi ; Nagamatsu, Kentaro ; Deki, Manato ; Kushimoto, Maki ; Nitta, Shugo ; Honda, Yoshio ; Amano, Hiroshi ; Sugawara, Yoshihiro ; Yao, Yong-Zhao ; Ishikawa, YukariApplied physics letters, 2018-04, Vol.112 (18) [Revista revisada por pares]Texto completo disponible |
16 |
Material Type: Artículo
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Ultra-broadband microwave metamaterial absorberDing, Fei ; Cui, Yanxia ; Ge, Xiaochen ; Jin, Yi ; He, SailingApplied physics letters, 2012-03, Vol.100 (10), p.103506-103506-4 [Revista revisada por pares]American Institute of PhysicsTexto completo disponible |
17 |
Material Type: Artículo
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Revisiting lattice thermal transport in PbTe: The crucial role of quartic anharmonicityXia, YiApplied physics letters, 2018-08, Vol.113 (7) [Revista revisada por pares]United States: American Institute of Physics (AIP)Texto completo disponible |
18 |
Material Type: Artículo
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Placing single atoms in graphene with a scanning transmission electron microscopeDyck, Ondrej ; Kim, Songkil ; Kalinin, Sergei V. ; Jesse, StephenApplied physics letters, 2017-09, Vol.111 (11) [Revista revisada por pares]United States: American Institute of Physics (AIP)Texto completo disponible |
19 |
Material Type: Artículo
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Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on SiJung, Daehwan ; Herrick, Robert ; Norman, Justin ; Turnlund, Katherine ; Jan, Catherine ; Feng, Kaiyin ; Gossard, Arthur C. ; Bowers, John E.Applied physics letters, 2018-04, Vol.112 (15) [Revista revisada por pares]United States: American Institute of PhysicsTexto completo disponible |
20 |
Material Type: Artículo
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The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2Pirkle, A. ; Chan, J. ; Venugopal, A. ; Hinojos, D. ; Magnuson, C. W. ; McDonnell, S. ; Colombo, L. ; Vogel, E. M. ; Ruoff, R. S. ; Wallace, R. M.Applied physics letters, 2011-09, Vol.99 (12) [Revista revisada por pares]Texto completo disponible |