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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Semiconductor Devices remover Physics remover
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11
High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
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High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

Yan, Xiaodong ; Esqueda, Ivan S. ; Ma, Jiahui ; Tice, Jesse ; Wang, Han

Applied physics letters, 2018-01, Vol.112 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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12
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
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β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Zhou, Hong ; Maize, Kerry ; Qiu, Gang ; Shakouri, Ali ; Ye, Peide D.

Applied physics letters, 2017-08, Vol.111 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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13
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals
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Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals

Wang, Hua ; Qi, Jingshan ; Qian, Xiaofeng

Applied physics letters, 2020-08, Vol.117 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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14
Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]
Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]
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Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]

Wang, Yingjie ; Huang, Sen ; Jiang, Qimeng ; Wang, Xinhua ; Ji, Zhongchen ; Fan, Jie ; Yin, Haibo ; Wei, Ke ; Liu, Xinyu ; Sun, Qian ; Chen, Kevin J.

Applied physics letters, 2024-04, Vol.124 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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15
Multi-gate organic neuron transistors for spatiotemporal information processing
Multi-gate organic neuron transistors for spatiotemporal information processing
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Multi-gate organic neuron transistors for spatiotemporal information processing

Qian, Chuan ; Kong, Ling-an ; Yang, Junliang ; Gao, Yongli ; Sun, Jia

Applied physics letters, 2017-02, Vol.110 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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16
Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric
Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric
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Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric

Xu, Jiao ; Jia, Jingyuan ; Lai, Shen ; Ju, Jaehyuk ; Lee, Sungjoo

Applied physics letters, 2017-01, Vol.110 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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17
On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals
On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals
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On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals

Chang, Hsiao-Yu ; Zhu, Weinan ; Akinwande, Deji

Applied physics letters, 2014-03, Vol.104 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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18
High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes
High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes
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High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes

Hwang, Wan Sik ; Verma, Amit ; Peelaers, Hartwin ; Protasenko, Vladimir ; Rouvimov, Sergei ; (Grace) Xing, Huili ; Seabaugh, Alan ; Haensch, Wilfried ; de Walle, Chris Van ; Galazka, Zbigniew ; Albrecht, Martin ; Fornari, Roberto ; Jena, Debdeep

Applied physics letters, 2014-05, Vol.104 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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19
Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
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Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

Guo, Yao ; Wei, Xianlong ; Shu, Jiapei ; Liu, Bo ; Yin, Jianbo ; Guan, Changrong ; Han, Yuxiang ; Gao, Song ; Chen, Qing

Applied physics letters, 2015-03, Vol.106 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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20
Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate
Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate
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Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate

Liang, Xiaoci ; Li, Zhenwen ; Liu, Ling ; Chen, Shujian ; Wang, Xinzhong ; Pei, Yanli

Applied physics letters, 2020-01, Vol.116 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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