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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Applied Sciences remover
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1
A highly processable metallic glass : Zr41.2Ti13.8Cu12.5Ni10.0Be22.5
A highly processable metallic glass : Zr41.2Ti13.8Cu12.5Ni10.0Be22.5
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A highly processable metallic glass : Zr41.2Ti13.8Cu12.5Ni10.0Be22.5

PEKER, A ; JOHNSON, W. L

Applied physics letters, 1993-10, Vol.63 (17), p.2342-2344 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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2
Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ink followed by chemical etching
Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ink followed by chemical etching
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Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ink followed by chemical etching

AMIT KUMAR ; WHITESIDES, G. M

Applied physics letters, 1993-10, Vol.63 (14), p.2002-2004 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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3
Semiconducting polymer-buckminsterfullerene heterojunctions : diodes, photodiodes, and photovoltaic cells
Semiconducting polymer-buckminsterfullerene heterojunctions : diodes, photodiodes, and photovoltaic cells
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Semiconducting polymer-buckminsterfullerene heterojunctions : diodes, photodiodes, and photovoltaic cells

SARICIFTCI, N. S ; BRAUN, D ; ZHANG, C ; SRDANOV, V. I ; HEEGER, A. J ; STUCKY, G ; WUDL, F

Applied physics letters, 1993-02, Vol.62 (6), p.585-587 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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4
High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction
High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction
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High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction

ASIF KHAN, M ; BHATTARAI, A ; KUZNIA, J. N ; OLSON, D. T

Applied physics letters, 1993-08, Vol.63 (9), p.1214-1215 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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5
Visible light emission from semiconducting polymer diodes
Visible light emission from semiconducting polymer diodes
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Visible light emission from semiconducting polymer diodes

BRAUN, D ; HEEGER, A. J

Applied physics letters, 1991-05, Vol.58 (18), p.1982-1984 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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6
High-power InGaN/GaN double-heterostructure violet light emitting diodes
High-power InGaN/GaN double-heterostructure violet light emitting diodes
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High-power InGaN/GaN double-heterostructure violet light emitting diodes

NAKAMURA, S ; SENOH, M ; MUKAI, T

Applied physics letters, 1993-05, Vol.62 (19), p.2390-2392 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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7
Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors
Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors
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Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors

LIBSCH, F. R ; KANICHI, J

Applied physics letters, 1993-03, Vol.62 (11), p.1286-1288 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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8
POLY(P-PHENYLENEVINYLENE) LIGHT-EMITTING-DIODES - ENHANCED ELECTROLUMINESCENT EFFICIENCY THROUGH CHARGE CARRIER CONFINEMENT
POLY(P-PHENYLENEVINYLENE) LIGHT-EMITTING-DIODES - ENHANCED ELECTROLUMINESCENT EFFICIENCY THROUGH CHARGE CARRIER CONFINEMENT
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POLY(P-PHENYLENEVINYLENE) LIGHT-EMITTING-DIODES - ENHANCED ELECTROLUMINESCENT EFFICIENCY THROUGH CHARGE CARRIER CONFINEMENT

BROWN, AR ; BRADLEY, DDC ; BURROUGHES, JH ; FRIEND, RH ; GREENHAM, NC ; BURN, PL ; HOLMES, AB ; KRAFT, A

Applied physics letters, 1992-12, Vol.61 (23), p.2793-2795 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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9
Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes
Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes
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Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes

EOM, C. B ; VAN DOVER, R. B ; PHILLIPS, J. M ; WERDER, D. J ; MARSHALL, J. H ; CHEN, C. H ; CAVA, R. J ; FLEMING, R. M ; FORK, D. K

Applied physics letters, 1993-11, Vol.63 (18), p.2570-2572 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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10
ZnO/CdS/CuInSe2 thin-film solar cells with improved performance
ZnO/CdS/CuInSe2 thin-film solar cells with improved performance
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ZnO/CdS/CuInSe2 thin-film solar cells with improved performance

STOLT, L ; HEDSTRÖM, J ; KESSLER, J ; RUCKH, M ; VELTHAUS, K.-O ; SCHOCK, H.-W

Applied physics letters, 1993-02, Vol.62 (6), p.597-599 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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