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Material Type: Artigo
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Strain engineering 4H-SiC with ion beamsZhang, F. X. ; Tong, Y. ; Xue, Haizhou ; Keum, J. K. ; Zhang, Yanwen ; Boulle, A. ; Debelle, A. ; Weber, W. J.Applied physics letters, 2019-06, Vol.114 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Crystallographic selective growth of GaAs by atomic layer epitaxyISSHIKI, H ; AOYAGI, Y ; SUGANO, T ; IWAI, S ; MEGURO, TApplied physics letters, 1993-09, Vol.63 (11), p.1528-1530 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |