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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Materials Science remover Crystal Growth remover
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Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)
Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)
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Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Tsipas, P. ; Kassavetis, S. ; Tsoutsou, D. ; Xenogiannopoulou, E. ; Golias, E. ; Giamini, S. A. ; Grazianetti, C. ; Chiappe, D. ; Molle, A. ; Fanciulli, M. ; Dimoulas, A.

Applied physics letters, 2013-12, Vol.103 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
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Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Liu, Hanxiao ; Fu, Houqiang ; Fu, Kai ; Alugubelli, Shanthan R. ; Su, Po-Yi ; Zhao, Yuji ; Ponce, Fernando A.

Applied physics letters, 2019-02, Vol.114 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces
Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces
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Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Michl, Julia ; Teraji, Tokuyuki ; Zaiser, Sebastian ; Jakobi, Ingmar ; Waldherr, Gerald ; Dolde, Florian ; Neumann, Philipp ; Doherty, Marcus W. ; Manson, Neil B. ; Isoya, Junichi ; Wrachtrup, Jörg

Applied physics letters, 2014-03, Vol.104 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Additive to regulate the perovskite crystal film growth in planar heterojunction solar cells
Additive to regulate the perovskite crystal film growth in planar heterojunction solar cells
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Additive to regulate the perovskite crystal film growth in planar heterojunction solar cells

Song, Xin ; Wang, Weiwei ; Sun, Po ; Ma, Wanli ; Chen, Zhi-Kuan

Applied physics letters, 2015-01, Vol.106 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films
Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films
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Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

Akiyama, Morito ; Kano, Kazuhiko ; Teshigahara, Akihiko

Applied physics letters, 2009-10, Vol.95 (16), p.162107-162107-3 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Reinvestigation of the thermal properties of single-crystalline SnSe
Reinvestigation of the thermal properties of single-crystalline SnSe
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Reinvestigation of the thermal properties of single-crystalline SnSe

Ibrahim, D. ; Vaney, J.-B. ; Sassi, S. ; Candolfi, C. ; Ohorodniichuk, V. ; Levinsky, P. ; Semprimoschnig, C. ; Dauscher, A. ; Lenoir, B.

Applied physics letters, 2017-01, Vol.110 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy
Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy
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Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy

Ihlefeld, J. F. ; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 ; Podraza, N. J. ; Liu, Z. K. ; Schlom, D. G. ; Rai, R. C. ; Xu, X. ; Musfeldt, J. L. ; Heeg, T. ; Schubert, J. ; Chen, Y. B. ; Pan, X. Q. ; Li, J. ; Collins, R. W. ; Ramesh, R. ; Department of Physics, University of California, Berkeley, California 94720

Applied physics letters, 2008-04, Vol.92 (14) [Periódico revisado por pares]

United States

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8
Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
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Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

Lesik, M. ; Tetienne, J.-P. ; Tallaire, A. ; Achard, J. ; Mille, V. ; Gicquel, A. ; Roch, J.-F. ; Jacques, V.

Applied physics letters, 2014-03, Vol.104 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Strontium and barium iodide high light yield scintillators
Strontium and barium iodide high light yield scintillators
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Strontium and barium iodide high light yield scintillators

Cherepy, Nerine J. ; Hull, Giulia ; Drobshoff, Alexander D. ; Payne, Stephen A. ; van Loef, Edgar ; Wilson, Cody M. ; Shah, Kanai S. ; Roy, Utpal N. ; Burger, Arnold ; Boatner, Lynn A. ; Choong, Woon-Seng ; Moses, William W.

Applied physics letters, 2008-02, Vol.92 (8), p.083508-083508-3 [Periódico revisado por pares]

United States: American Institute of Physics

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10
3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach
3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach
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3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach

Lyakh, A. ; Maulini, R. ; Tsekoun, A. ; Go, R. ; Pflügl, C. ; Diehl, L. ; Wang, Q. J. ; Capasso, Federico ; Patel, C. Kumar N.

Applied physics letters, 2009-10, Vol.95 (14), p.141113-141113-3 [Periódico revisado por pares]

United States: American Institute of Physics

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Assunto 

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