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1 |
Material Type: Artigo
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Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulationSedao, Xxx ; Maurice, Claire ; Garrelie, Florence ; Colombier, Jean-Philippe ; Reynaud, Stéphanie ; Quey, Romain ; Pigeon, FlorentApplied physics letters, 2014-04, Vol.104 (17) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Ultrafast spectroscopy of shift-current in ferroelectric semiconductor Sn2P2S6Sotome, M. ; Nakamura, M. ; Fujioka, J. ; Ogino, M. ; Kaneko, Y. ; Morimoto, T. ; Zhang, Y. ; Kawasaki, M. ; Nagaosa, N. ; Tokura, Y. ; Ogawa, N.Applied physics letters, 2019-04, Vol.114 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Strong second-harmonic generation in silicon nitride filmsNing, Tingyin ; Pietarinen, Henna ; Hyvärinen, Outi ; Simonen, Janne ; Genty, Goëry ; Kauranen, MarttiApplied physics letters, 2012-04, Vol.100 (16), p.161902-161902-4 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Different chromophore concentration dependence of photoinduced birefringence and second-order susceptibility in all-optical polingVirkki, Matti ; Kauranen, Martti ; Priimagi, ArriApplied physics letters, 2011-10, Vol.99 (18), p.183309-183309-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Surface-plasmon-assisted modal gain enhancement in Au-hybrid CdSe/ZnS nanocrystal quantum dotsKim, Jihoon ; Lee, Jaebeom ; Kyhm, KwangseukApplied physics letters, 2011-11, Vol.99 (21), p.213112-213112-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin filmsCai, Y. ; Zhou, Y. G. ; Chen, K. J. ; Lau, K. M.Applied physics letters, 2005-01, Vol.86 (3), p.032109-032109-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |