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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Semiconductor Devices remover Physics remover Field Effect Transistors remover
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A critical review of recent progress on negative capacitance field-effect transistors
A critical review of recent progress on negative capacitance field-effect transistors
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A critical review of recent progress on negative capacitance field-effect transistors

Alam, Muhammad A. ; Si, Mengwei ; Ye, Peide D.

Applied physics letters, 2019-03, Vol.114 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
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2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Roy, Tania ; Tosun, Mahmut ; Hettick, Mark ; Ahn, Geun Ho ; Hu, Chenming ; Javey, Ali

Applied physics letters, 2016-02, Vol.108 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
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High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

Bao, Wenzhong ; Cai, Xinghan ; Kim, Dohun ; Sridhara, Karthik ; Fuhrer, Michael S.

Applied physics letters, 2013-01, Vol.102 (4) [Periódico revisado por pares]

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4
High-performance MoS2 transistors with low-resistance molybdenum contacts
High-performance MoS2 transistors with low-resistance molybdenum contacts
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High-performance MoS2 transistors with low-resistance molybdenum contacts

Kang, Jiahao ; Liu, Wei ; Banerjee, Kaustav

Applied physics letters, 2014-03, Vol.104 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Chabak, Kelson D. ; Moser, Neil ; Green, Andrew J. ; Walker, Dennis E. ; Tetlak, Stephen E. ; Heller, Eric ; Crespo, Antonio ; Fitch, Robert ; McCandless, Jonathan P. ; Leedy, Kevin ; Baldini, Michele ; Wagner, Gunter ; Galazka, Zbigniew ; Li, Xiuling ; Jessen, Gregg

Applied physics letters, 2016-11, Vol.109 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
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β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Zhou, Hong ; Maize, Kerry ; Qiu, Gang ; Shakouri, Ali ; Ye, Peide D.

Applied physics letters, 2017-08, Vol.111 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals
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Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals

Wang, Hua ; Qi, Jingshan ; Qian, Xiaofeng

Applied physics letters, 2020-08, Vol.117 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]
Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]
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Publisher's Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]

Wang, Yingjie ; Huang, Sen ; Jiang, Qimeng ; Wang, Xinhua ; Ji, Zhongchen ; Fan, Jie ; Yin, Haibo ; Wei, Ke ; Liu, Xinyu ; Sun, Qian ; Chen, Kevin J.

Applied physics letters, 2024-04, Vol.124 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric
Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric
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Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric

Xu, Jiao ; Jia, Jingyuan ; Lai, Shen ; Ju, Jaehyuk ; Lee, Sungjoo

Applied physics letters, 2017-01, Vol.110 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Exfoliated multilayer MoTe2 field-effect transistors
Exfoliated multilayer MoTe2 field-effect transistors
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Exfoliated multilayer MoTe2 field-effect transistors

Fathipour, S. ; Ma, N. ; Hwang, W. S. ; Protasenko, V. ; Vishwanath, S. ; Xing, H. G. ; Xu, H. ; Jena, D. ; Appenzeller, J. ; Seabaugh, A.

Applied physics letters, 2014-11, Vol.105 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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