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Refinado por: Nome da Publicação: Physical Review B remover
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1
Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices

Yuri A. Pusep Francisco Eduardo Gontijo Guimarães; M. B Ribeiro; Haroldo Arakaki; Carlos Alberto de Souza; S Malzer; G. H Döhler

Physical Review B College Park v. 70, n. 9, p. 092301-1-092301-4, Sep. 2004

College Park 2004

Localização: IFSC - Inst. Física de São Carlos    (PROD010089 )(Acessar)

2
Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices

Yuri A. Pusep Francisco Eduardo Gontijo Guimarães; M. B Ribeiro; Haroldo Arakaki; Carlos Alberto de Souza; S Malzer; G. H Döhler

Physical Review B College Park v. 70, n. 9, p. 092301-1-092301-4, Sep. 2004

College Park 2004

Localização: IFSC - Inst. Física de São Carlos    (PROD010089 )(Acessar)

3
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
Material Type:
Artigo 		Adicionar ao Meu Espaço

Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well

A Cavalheiro Euzi Conceicao Fernandes da Silva; E K Takahashi; A. A Quivy (Alain André); J. R Leite (José Roberto); E A Meneses

Physical Review B Woodbury v. 65, n. 7, p. 75320/1-75320/7, 2002

Woodbury 2002

Acesso online

4
Band-edge polarized optical absorption in europium chalcogenides
Band-edge polarized optical absorption in europium chalcogenides
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Band-edge polarized optical absorption in europium chalcogenides

André Bohomoletz Henriques Antoine Joseph Wiertz 1806-1865; M A Manfrini; G Springholz; P H O Rappl; E Abramof; Y Ueta

Physical Review B v. 72, n. 6, p. 155337/1-155337/5, 2005

Woodbury 2005

Acesso online

5
Localized-to-extended-states transition below the Fermi level
Localized-to-extended-states transition below the Fermi level
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Localized-to-extended-states transition below the Fermi level

M. A. Tito Yuri A Pusep

Physical Review B College Park : American Physical Society - APS v. 97, n. 18, p. 184203-1-184203-6, May 2018

College Park 2018

Localização: IFSC - Inst. Física de São Carlos    (PROD027456 )(Acessar)

6
Recombination dynamics of Landau levels in an InGaAs/InP quantum well
Recombination dynamics of Landau levels in an InGaAs/InP quantum well
Material Type:
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Recombination dynamics of Landau levels in an InGaAs/InP quantum well

M. D. Teodoro B. G. M Tavares; E. D. Guarin Castro; R. R LaPierre; Yuri A Pusep

Physical Review B College Park : American Physical Society - APS v. 98, n. 15, p. 155431-1-155431-7, Oct. 2018

College Park 2018

Localização: IFSC - Inst. Física de São Carlos    (PROD027997 )(Acessar)

7
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
Material Type:
Artigo 		Adicionar ao Meu Espaço

Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well

A Cavalheiro Euzi Conceicao Fernandes da Silva; E K Takahashi; A. A Quivy (Alain André); J. R Leite (José Roberto); E A Meneses

Physical Review B Woodbury v. 65, n. 7, p. 75320/1-75320/7, 2002

Woodbury 2002

Acesso online

8
Band-edge polarized optical absorption in europium chalcogenides
Band-edge polarized optical absorption in europium chalcogenides
Material Type:
Artigo 		Adicionar ao Meu Espaço

Band-edge polarized optical absorption in europium chalcogenides

André Bohomoletz Henriques Antoine Joseph Wiertz 1806-1865; M A Manfrini; G Springholz; P H O Rappl; E Abramof; Y Ueta

Physical Review B v. 72, n. 6, p. 155337/1-155337/5, 2005

Woodbury 2005

Acesso online

9
Magnetic field breakdown of electron hydrodynamics
Magnetic field breakdown of electron hydrodynamics
Material Type:
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Magnetic field breakdown of electron hydrodynamics

Marco Antonio Tito Patricio Gabriel Marques Jacobsen; Vinicius Andrade de Oliveira; Marcio Daldin Teodoro; Gennady Gusev; Askhat K Bakarov; Yuri A Pusep

Physical Review B College Park v. 110, n. 4, p. 45411-1-45411-5, July, 2024

College Park 2024

Localização: IFSC - Inst. Física de São Carlos    (PROD035992 )(Acessar)

10
Stability and electronic confinement of free-standing InP nanowires Ab initio calculations
Stability and electronic confinement of free-standing InP nanowires Ab initio calculations
Material Type:
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Stability and electronic confinement of free-standing InP nanowires Ab initio calculations

T M Schmidt R H Miwa; P Venezuela; Adalberto Fazzio

Physical Review B Woodbury v. 72, n. 19, pt. 2, p. 193404/1-193404/4, 2005

Woodbury 2005

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Pusep, Y
  2. Bakarov, A
  3. Smirnov, D
  4. Santos, L
  5. Gusev, G

Neste Assunto:

  1. Fotoluminescência
  2. Poços Quânticos
  3. Matéria Condensada
  4. Polarização
  5. Semicondutores

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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