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Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
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Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells

E Laureto E A Meneses; W Carvalho Junior; A A Bernussi; E Ribeiro; Euzi Conceicao Fernandes da Silva; J B B de Oliveira

Brazilian Journal of Physics São Paulo v. 32, n. 2A, p. 314-317, 2002

São Paulo 2002

Acesso online

2
Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells

E Laureto E A Meneses; W Carvalho Junior; A A Bernussi; E Ribeiro; Euzi Conceicao Fernandes da Silva; J B B de Oliveira

Brazilian Journal of Physics São Paulo v. 32, n. 2A, p. 314-317, 2002

São Paulo 2002

Acesso online

3
Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells
Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells
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Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells

Luis Enrique Gomez Armas Antonio Carlos Seabra 1961-; E C F Silva; C A Duarte; Ivan Ramos Pagnossin; Alain André Quivy; J. W Menezes; Carlos Jacinto; Gennady Gusev

Physica E: Low-dimensional Systems and Nanostructures v. 61, p. 158-166, July 2014

2014

Item não circula. Consulte sua biblioteca.(Acessar)

4
Influence of the 'AL' concentration on the electronic properties of coupled and uncoupled 'AL' IND. 'qui''GA' IND. 1−'qui''AS'/'AL''AS'/'AL' IND. gama''GA IND. 1−'gama''AS' double quantum wells
Influence of the 'AL' concentration on the electronic properties of coupled and uncoupled 'AL' IND. 'qui''GA' IND. 1−'qui''AS'/'AL''AS'/'AL' IND. gama''GA IND. 1−'gama''AS' double quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of the 'AL' concentration on the electronic properties of coupled and uncoupled 'AL' IND. 'qui''GA' IND. 1−'qui''AS'/'AL''AS'/'AL' IND. gama''GA IND. 1−'gama''AS' double quantum wells

Luis Enrique Gomez Armas J. W Menezes; C. A Duarte; C Jacinto; Antonio Carlos Seabra 1961-; Ivan Ramos Pagnossin; Alain André Quivy; Euzi Conceição Fernandes da Silva; Gennady Gusev

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Amsterdam v. 61, p. 158-166, jul.2014

Amsterdam 2014

Acesso online

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Assunto 

  1. Fotoluminescência  (2)
  2. Materiais Nanoestruturados  (1)
  3. Eletrônica  (1)
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Deste Autor:

  1. Silva, E
  2. Ribeiro, E
  3. Gomez Armas, L
  4. Duarte, C
  5. Meneses, E

Neste Assunto:

  1. Fotoluminescência
  2. Materiais Nanoestruturados
  3. Eletrônica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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