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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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A highly processable metallic glass : Zr41.2Ti13.8Cu12.5Ni10.0Be22.5PEKER, A ; JOHNSON, W. LApplied physics letters, 1993-10, Vol.63 (17), p.2342-2344 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 2 |
Material Type: Artigo
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High electron mobility transistor based on a GaN-AlxGa1-xN heterojunctionASIF KHAN, M ; BHATTARAI, A ; KUZNIA, J. N ; OLSON, D. TApplied physics letters, 1993-08, Vol.63 (9), p.1214-1215 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 3 |
Material Type: Artigo
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Semiconducting polymer-buckminsterfullerene heterojunctions : diodes, photodiodes, and photovoltaic cellsSARICIFTCI, N. S ; BRAUN, D ; ZHANG, C ; SRDANOV, V. I ; HEEGER, A. J ; STUCKY, G ; WUDL, FApplied physics letters, 1993-02, Vol.62 (6), p.585-587 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 4 |
Material Type: Artigo
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High-power InGaN/GaN double-heterostructure violet light emitting diodesNAKAMURA, S ; SENOH, M ; MUKAI, TApplied physics letters, 1993-05, Vol.62 (19), p.2390-2392 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 5 |
Material Type: Artigo
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Visible light emission from semiconducting polymer diodesBRAUN, D ; HEEGER, A. JApplied physics letters, 1991-05, Vol.58 (18), p.1982-1984 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 6 |
Material Type: Artigo
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POLY(P-PHENYLENEVINYLENE) LIGHT-EMITTING-DIODES - ENHANCED ELECTROLUMINESCENT EFFICIENCY THROUGH CHARGE CARRIER CONFINEMENTBROWN, AR ; BRADLEY, DDC ; BURROUGHES, JH ; FRIEND, RH ; GREENHAM, NC ; BURN, PL ; HOLMES, AB ; KRAFT, AApplied physics letters, 1992-12, Vol.61 (23), p.2793-2795 [Periódico revisado por pares]WOODBURY: Amer Inst PhysicsTexto completo disponível |
| 7 |
Material Type: Artigo
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Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodesEOM, C. B ; VAN DOVER, R. B ; PHILLIPS, J. M ; WERDER, D. J ; MARSHALL, J. H ; CHEN, C. H ; CAVA, R. J ; FLEMING, R. M ; FORK, D. KApplied physics letters, 1993-11, Vol.63 (18), p.2570-2572 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 8 |
Material Type: Artigo
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ZnO/CdS/CuInSe2 thin-film solar cells with improved performanceSTOLT, L ; HEDSTRÖM, J ; KESSLER, J ; RUCKH, M ; VELTHAUS, K.-O ; SCHOCK, H.-WApplied physics letters, 1993-02, Vol.62 (6), p.597-599 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 9 |
Material Type: Artigo
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Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistorsLIBSCH, F. R ; KANICHI, JApplied physics letters, 1993-03, Vol.62 (11), p.1286-1288 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
| 10 |
Material Type: Artigo
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Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon via template growthRAMESH, R ; GILCHRIST, H ; SANDS, T ; KERAMIDAS, V. G ; HAAKENAASEN, R ; FORK, D. KApplied physics letters, 1993-12, Vol.63 (26), p.3592-3594 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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