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Refinado por: Base de dados/Biblioteca: DOAJ Directory of Open Access Journals remover assunto: Molecular Beam Epitaxy remover
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Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes
Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes
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Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes

Antolini, Francesco

Nanomaterials (Basel, Switzerland), 2023-07, Vol.13 (13), p.2008 [Periódico revisado por pares]

Switzerland: MDPI AG

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2
Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
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Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate

Shang, Xiangjun ; Su, Xiangbin ; Liu, Hanqing ; Hao, Huiming ; Li, Shulun ; Dai, Deyan ; Li, Mifeng ; Yu, Ying ; Zhang, Yu ; Wang, Guowei ; Xu, Yingqiang ; Ni, Haiqiao ; Niu, Zhichuan

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (13), p.1959 [Periódico revisado por pares]

Switzerland: MDPI AG

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3
E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate
E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate
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E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Liang, Wenqian ; Wei, Wenqi ; Han, Dong ; Ming, Ming ; Zhang, Jieyin ; Wang, Zihao ; Zhang, Xinding ; Wang, Ting ; Zhang, Jianjun

Materials, 2024-04, Vol.17 (8), p.1916 [Periódico revisado por pares]

Switzerland: MDPI AG

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4
Carrier Transport in Colloidal Quantum Dot Intermediate Band Solar Cell Materials Using Network Science
Carrier Transport in Colloidal Quantum Dot Intermediate Band Solar Cell Materials Using Network Science
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Carrier Transport in Colloidal Quantum Dot Intermediate Band Solar Cell Materials Using Network Science

Cuadra, Lucas ; Salcedo-Sanz, Sancho ; Nieto-Borge, José Carlos

International journal of molecular sciences, 2023-02, Vol.24 (4), p.3797 [Periódico revisado por pares]

Switzerland: MDPI AG

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5
Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
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Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review

Wang, Bin ; Zeng, Yugang ; Song, Yue ; Wang, Ye ; Liang, Lei ; Qin, Li ; Zhang, Jianwei ; Jia, Peng ; Lei, Yuxin ; Qiu, Cheng ; Ning, Yongqiang ; Wang, Lijun

Crystals (Basel), 2022-07, Vol.12 (7), p.1011 [Periódico revisado por pares]

Basel: MDPI AG

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6
Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket
Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket
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Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

Feng, Kaiyin ; Shang, Chen ; Hughes, Eamonn ; Clark, Andrew ; Koscica, Rosalyn ; Ludewig, Peter ; Harame, David ; Bowers, John

Photonics, 2023-05, Vol.10 (5), p.534 [Periódico revisado por pares]

Basel: MDPI AG

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7
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon
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Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Mengya Liao ; Siming Chen ; Suguo Huo ; Si Chen ; Jiang Wu ; Mingchu Tang ; Kennedy, Ken ; Wei Li ; Kumar, Saurabh ; Martin, Mickael ; Baron, Thierry ; Chaoyuan Jin ; Ross, Ian ; Seeds, Alwyn ; Huiyun Liu

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-10 [Periódico revisado por pares]

New York: IEEE

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8
High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy
High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy
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High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy

Hao, H M ; Su, X B ; Liu, H Q ; Shang, X J ; Ni, H Q ; Niu, Z C

Journal of physics. Conference series, 2022-03, Vol.2226 (1), p.12006 [Periódico revisado por pares]

Bristol: IOP Publishing

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9
Effect of temperature in the sol–gel method on the morphology of the ZnO layer used as a window layer in the PbS quantum dot solar cells
Effect of temperature in the sol–gel method on the morphology of the ZnO layer used as a window layer in the PbS quantum dot solar cells
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Effect of temperature in the sol–gel method on the morphology of the ZnO layer used as a window layer in the PbS quantum dot solar cells

Nazarzadeh, Mohsen ; Irannejad, Ahmad ; Joodaki, Mojtaba

Bulletin of materials science, 2024-03, Vol.47 (2), p.68, Article 68 [Periódico revisado por pares]

Bangalore: Indian Academy of Sciences

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10
Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy
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Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Smołka, Tristan ; Posmyk, Katarzyna ; Wasiluk, Maja ; Wyborski, Paweł ; Gawełczyk, Michał ; Mrowiński, Paweł ; Mikulicz, Monika ; Zielińska, Agata ; Reithmaier, Johann Peter ; Musiał, Anna ; Benyoucef, Mohamed

Materials, 2021-10, Vol.14 (21), p.6270 [Periódico revisado por pares]

Basel: MDPI AG

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