Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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E‐Band InAs/GaAs Trilayer Quantum Dot LasersZhan, Wenbo ; Kwoen, Jinkwan ; Imoto, Takaya ; Iwamoto, Satoshi ; Arakawa, YasuhikoPhysica status solidi. A, Applications and materials science, 2022-02, Vol.219 (4), p.n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |
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2 |
Material Type: Artigo
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Improvement in Performance of InAs Surface Quantum Dot Heterostructure Based H2S Gas Sensor by Introducing Buried Quantum Dot LayerMantri, Manas Ranjan ; Panda, Debi Prasad ; Punetha, Deepak ; Pandey, Sushil Kumar ; Singh, Vivek Pratap ; Pandey, Saurabh Kumar ; Chakrabarti, SubhanandaIEEE sensors journal, 2023-07, Vol.23 (14), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on siliconGuo, Daqian ; Huang, Jian ; Benamara, Mourad ; Mazur, Yuriy I. ; Deng, Zhuo ; Salamo, Gregory J. ; Liu, Huiyun ; Chen, Baile ; Wu, JiangIEEE journal of quantum electronics, 2023-04, Vol.59 (2), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealingYou, Weicheng ; Arefin, Riazul ; Uzgur, Fatih ; Lee, Seunghyun ; Addamane, Sadhvikas J ; Liang, Baolai ; Arafin, ShamsulOptics letters, 2023-04, Vol.48 (7), p.1938 [Periódico revisado por pares]United States: Optical Society of AmericaSem texto completo |
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5 |
Material Type: Artigo
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Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxyHuwayz, M. Al ; Jameel, D. A ; de Azevedo, Walter M ; Felix, Jorlandio F ; Saqri, N. Al ; Lemine, O. M ; Alrub, S. Abu ; Henini, MPhysical chemistry chemical physics : PCCP, 2023-12, Vol.26 (1), p.445-454 [Periódico revisado por pares]England: Royal Society of ChemistryTexto completo disponível |
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6 |
Material Type: Artigo
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Low areal densities of InAs quantum dots on GaAs(100) prepared by molecular beam epitaxyVerma, A.K. ; Bopp, F. ; Finley, J.J. ; Jonas, B. ; Zrenner, A. ; Reuter, D.Journal of crystal growth, 2022-08, Vol.592, p.126715, Article 126715 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers SubstrateShang, Xiangjun ; Su, Xiangbin ; Liu, Hanqing ; Hao, Huiming ; Li, Shulun ; Dai, Deyan ; Li, Mifeng ; Yu, Ying ; Zhang, Yu ; Wang, Guowei ; Xu, Yingqiang ; Ni, Haiqiao ; Niu, ZhichuanNanomaterials (Basel, Switzerland), 2023-06, Vol.13 (13), p.1959 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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8 |
Material Type: Artigo
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Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on SiliconMengya Liao ; Siming Chen ; Suguo Huo ; Si Chen ; Jiang Wu ; Mingchu Tang ; Kennedy, Ken ; Wei Li ; Kumar, Saurabh ; Martin, Mickael ; Baron, Thierry ; Chaoyuan Jin ; Ross, Ian ; Seeds, Alwyn ; Huiyun LiuIEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-10 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxyHao, H M ; Su, X B ; Liu, H Q ; Shang, X J ; Ni, H Q ; Niu, Z CJournal of physics. Conference series, 2022-03, Vol.2226 (1), p.12006 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si SubstratesLee, A. D. ; Qi Jiang ; Mingchu Tang ; Yunyan Zhang ; Seeds, A. J. ; Huiyun LiuIEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.1901107-1901107 [Periódico revisado por pares]New York: IEEETexto completo disponível |